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首页> 外文期刊>Optical Materials >Luminescence of RE-ions in HfO_2 thin films and some possible applications
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Luminescence of RE-ions in HfO_2 thin films and some possible applications

机译：HFO_2薄膜中的重新离子的发光和一些可能的应用

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摘要

Photoluminescence (PL) of rare-earth (Sm, Eu, Tb) ions in HfO_2 thin films has been investigated at 10 and 300 K. Samples were prepared by using the sol-gel and the atomic layer deposition (ALD) methods. An intense PL emission characteristic of 4f-shell transitions of RE~(3+) ions was observed under the excitation photon energies exceeding the band-gap energy of the host material. The measured PL excitation spectra that were similar to those of intrinsic emission confirmed the efficient energy transfer from the host material to dopants. The kinetics of RE~(3+) emission revealed a non-exponential behaviour in all studied materials, strongly depending on the thermal treatment of the materials. The results obtained suggest the application potential of RE-doped HfO_2 in scintillators as well as in chemical sensors.
机译：在10和300k的HFO_2薄膜中研究了稀土（SM，EU，Tb）离子的光致发光（SM，Eu，Tb）离子，通过使用溶胶 - 凝胶和原子层沉积（ALD）方法制备样品。在超出主体材料的带间隙能量的激发光子能量下观察到RE〜（3+）离子的4F壳转变的强烈PL发射特性。类似于本征发射的PL激发光谱，其证实了从主体材料到掺杂剂的有效能量转移。 Re〜（3+）排放的动力学在所有研究中揭示了非指数行为，强烈根据材料的热处理。得到的结果表明，在闪烁体中重新掺杂HFO_2的应用潜力以及化学传感器。

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