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首页> 外文期刊>Optical Materials >Development and characterization of TlGaSe_2 thin film-based photodetector for visible-light photodetector applications
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Development and characterization of TlGaSe_2 thin film-based photodetector for visible-light photodetector applications

机译：用于可见光光电探测器应用的TLGase_2薄膜光电探测器的开发与表征

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In current work a thermal evaporation technique has been employed to fabricate the thin films from the grown TlGaSe2 single crystal and investigated. X-ray diffraction study revealed the formation of polycrystalline films of monoclinic crystal system. The crystallite size was estimated to be 11 nm. Atomic force and scanning electron microscopy studies shows the nanocrystalline film fabrication and the size of grain was estimated. Optical study shows that the grown film is about 55% transparent in 800-1500 nm region and possess a sharp absorption edge. The direct energy gap of TlGaSe2 films was estimated around 2.31 eV. The photo current of the fabricated TlGaSe2 photodetector increases about 6 times compare to dark when exposed under 5 mW/cm(2) illumination. The fabricated detector possesses high external quantum efficiency of 158% and also the detectivity reached to 5.16. 10(10) at V = 10 V. The on/off behaviour of the device was also studied and found that the response time for growth and decay is 88 ms and 90 ms, respectively.
机译：在当前工作中，已经采用了热蒸发技术来制造来自生长的TLGase2单晶并研究的薄膜。 X射线衍射研究表明，单斜晶体系统的多晶膜的形成。微晶尺寸估计为11nm。原子力和扫描电子显微镜研究表明纳米晶体膜制造和粒度的尺寸估计。光学研究表明，生长的膜在800-1500nm区域中透明约55％并且具有急剧的吸收边缘。 TLGase2薄膜的直接能隙估计为2.31eV。当暴露在5mW / cm（2）照明下，制造的TLGase2光电探测器的光电流增加约6倍。制造的探测器具有158％的高外部量子效率，并且探测率达到5.16。 10（10）在V = 10 V.还研究了该装置的开/关法，并发现增长和衰减的响应时间分别为88毫秒和90毫秒。

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