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首页> 外文期刊>Optical Materials >Investigation of Schottky barrier height using area as parameter: Effect of hydrogen peroxide treatment on electrical optical properties of Schottky diode
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Investigation of Schottky barrier height using area as parameter: Effect of hydrogen peroxide treatment on electrical optical properties of Schottky diode

机译：使用区域作为参数的肖特基势垒高度研究：过氧化氢处理对肖特基二极管电光学的影响

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RF sputtered 25 nm ZnO thin film surface treated with H2O2 has produced the Schottky diodes of improved electrical and optical properties. The enhancement is associated with adsorbed and introduced oxygen at the film's surface and in bulk while H2O2 treatment as revealed by the XPS analysis. Further, H2O2 treatment also has improved the ZnO thin film's surface morphology, crystal structure, and optical properties studied by XRD, SEM, and PL measurement. The experimentally measured energy band gap is compared with density functional theory computation-based result to find the possible cause behind the change in edge excitation energy band after treatment. Besides, an alternative method by considering the Schottky diode area as a parameter is introduced to calculate barrier height. The five diodes average barrier height, calculated by the conventional Schottky model, was lower than the barrier height obtained by this proposed method. This result is obtained for the diodes fabricated on the nontreated and treated sample. The conventional and proposed methods showed Schottky diodes potential barrier lowering under UV illumination, and it was associated with the change in carrier density and desorption of adsorbed oxygen on the ZnO surface. The treated surface's low conductivity and high oxygen concentration governed the superior UV detection capability of Schottky diodes fabricated on it. The literature demonstrates many similar studies for large thicknesses of ZnO 150-1000 nm but not on ultra-thin (25 nm) ZnO film, even though the UV light can penetrate ZnO approximately to this depth.
机译：用H 2 O 2处理的RF溅射25nm ZnO薄膜表面已经产生了改进的电气和光学性质的肖特基二极管。该增强与薄膜表面和散装中的吸附和引入氧气相关，而H2O2处理如XPS分析所揭示的。此外，H 2 O 2处理还改善了通过XRD，SEM和PL测量研究的ZnO薄膜的表面形态，晶体结构和光学性质。实验测量的能带隙与基于密度功能理论计算的结果进行比较，以找到处理后边缘激励能带的变化背后可能的原因。此外，引入了通过考虑肖特基二极管区域作为参数的替代方法来计算屏障高度。通过传统的肖特基模型计算的五个二极管平均屏障高度低于通过该方法获得的阻挡高度。该结果用于在非生成的和处理的样品上制造的二极管。传统的和所提出的方法在紫外线照射下，肖特基二极管潜在屏障降低，并且与ZnO表面上吸附氧的载体密度和解吸的变化有关。处理过的表面的低导电性和高氧浓度控制了在其上制造的肖特基二极管的优异的UV检测能力。该文献表明，对于大厚度的ZnO 150-1000nm但不在超薄（25nm）ZnO膜上的许多类似的研究，即使UV光可以大致渗透到该深度。

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