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A combined photoelectron spectroscopy and capacity--voltage investigation of the aluminum/oligothiophene interface

机译：结合的光电子能谱和铝/低聚噻吩界面的电容-电压研究

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摘要

In order to better understand the electronic barriers at the metal contacts of organic 1ight emitting devices (OLEDs), we investigated interfaces of thin films of endcapped sexithiophene (EC6T) with metal contacts by Ultraviolet and X-ray Photoelectron Spectroscopy (UPS/XPS). We compare the interface of an EC6T film deposited on an Ag(l l l) surface and the interface obtained by deposition of Al on an EC6T film. The two situations differ in so far as a strong chemical reaction and diffusion of Al into the EC6T film occurs in the latter. For the EC6T/Ag(lll) interface we derive the existence of an interface dipole leading to a "band-offSet" directly at the interface. For Al/EC6T, the data suggest a common vacuum level for the reacted molecules and the Al. The band-offset is determined as l.7 eV. These results are discussed in context with capacity--voltage measurements performed on Al/EC6T/indium--tin-oxide OLEDs.
机译：为了更好地了解有机发光器件（OLED）的金属触点上的电子壁垒，我们通过紫外和X射线光电子能谱（UPS / XPS）研究了封端六噻吩（EC6T）薄膜与金属触点的界面。我们比较了沉积在Ag（111）表面上的EC6T膜的界面和通过在EC6T膜上沉积Al获得的界面。两种情况的不同之处在于，后者发生了强烈的化学反应，并且Al扩散到EC6T膜中。对于EC6T / Ag（III）接口，我们导出接口偶极子的存在，该偶极子直接在该接口处导致“ band-offSet”。对于Al / EC6T，数据表明反应后的分子和Al具有相同的真空度。带隙确定为1.7 eV。这些结果将结合在Al / EC6T /铟锡氧化物OLED上进行的容量-电压测量进行讨论。

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