Calculation of Photosensitivity of Porous Silicon with the Cylindrical Geometry of Pores

L. S. Monastyrskii; B. S. Sokolovskii; V. S. Vasylyshyn

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Calculation of Photosensitivity of Porous Silicon with the Cylindrical Geometry of Pores

机译：用孔的圆柱几何计算多孔硅的光敏性

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The paper theoretically investigates a model of the photosensitivity of porous silicon with cylindrical pores in the condition of homogeneous generation of photocarriers. Dependences of the photoconductivity of a porous semiconductor on the velocity of recombination of nonequilibrium carriers at the surfaces of pores, radius of pores and average distance between them are analyzed. At large velocities of surface recombination the photoconductivity of porous semiconductor is shown to linearly decrease with increasing the pore's radius.

机译：本文从理论上研究了在均匀产生光载流子的条件下，具有圆柱孔的多孔硅的光敏性模型。分析了多孔半导体的光电导率对孔表面非平衡载流子复合速度，孔半径和平均距离的依赖性。在表面重组的大速度下，多孔半导体的光电导率显示出随着孔半径的增加而线性降低。

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来源
《Optical memory & neural networks》 |2009年第1期|55-59|共5页
作者
L. S. Monastyrskii; B. S. Sokolovskii; V. S. Vasylyshyn;
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作者单位

Ivan Franko National University of Lviv, ul. Dragomanov 50, 79005 Lviv, Ukraine;

Ivan Franko National University of Lviv, ul. Dragomanov 50, 79005 Lviv, Ukraine;

Ivan Franko National University of Lviv, ul. Dragomanov 50, 79005 Lviv, Ukraine;

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原文格式 PDF
正文语种 eng
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关键词
porous silicon; photoconductivity; optoelectronic devices;

机译：多孔硅光电导性光电设备;

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Calculation of Photosensitivity of Porous Silicon with the Cylindrical Geometry of Pores

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