Diode-pumped passively mode-locked 1342 nm Nd:YVO4 laser with an AlGaInAs quantum-well saturable absorber

S. C. Huang H. L. Cheng Yi-Fan Chen K. W. Su Y. F. Chen* and K. F. Huang

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Diode-pumped passively mode-locked 1342 nm Nd:YVO4 laser with an AlGaInAs quantum-well saturable absorber

机译：带有AlGaInAs量子阱可饱和吸收器的二极管泵浦无源锁模1342 nm Nd：YVO4激光器

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We demonstrate what we believe to be the ﬁrst use of AlGaInAs quantum wells (QWs) as a saturable ab-nsorber for a diode-pumped passively mode locked Nd:YVO4 laser at 1342 nm. The QWs are grown on a Fe-ndoped InP substrate that is transparent at lasing wavelength. At an incident pump power of 13.5 W an av-nerage output power of 1.05 W with a continuous mode-locked pulse duration of 26.4 ps at a repetition ratenof 152 MHz was generated. © 2009 Optical Society of America

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《Optics Letters》 |2009年第15期|p.2348-2350|共3页
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S. C. Huang H. L. Cheng Yi-Fan Chen K. W. Su Y. F. Chen* and K. F. Huang;
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Department of Electrophysics, National Chiao Tung University, Hsinchu 300, Taiwan* Corresponding author: yfchen@cc.nctu.edu.tw;

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1. Diode-pumped passively mode-locked 1342 nm Nd:YVO_(4) laser with an AlGaInAs quantum-well saturable absorber [J] . S. C. Huang, H. L. Cheng, Yi-Fan Chen, Optics Letters . 2009,第15期

机译：具有AlGaInAs量子阱可饱和吸收器的二极管泵浦无源锁模1342 nm Nd：YVO_（4）激光器
2. InAs/GaAs quantum-dot saturable absorber for a diode-pumped passively mode-locked Nd : YVO4 laser at 1342 nm [J] . Su KW, Lai HC, Li A, Optics Letters . 2005,第12期

机译：InAs / GaAs量子点可饱和吸收体，用于1342 nm的二极管泵浦无源锁模Nd：YVO4激光器
3. 7.6 W 1342 nm passively mode-locked picosecond composite Nd:YVO4/YVO4 laser with a semiconductor saturable absorber mirror [J] . Tu Wei, Chen Ying, Zong Nan, Applied optics . 2015,第11期

机译：具有半导体可饱和吸收镜的7.6 W 1342 nm被动锁模皮秒复合Nd：YVO4 / YVO4激光器
4. AlGaInAs quantum-well saturable absorbers for a diode-pumped passively Q-switched Nd:YVO4 laser at 1064 nm [C] . S.C.Huang, H.L.Chang, K.W.Su, 2008亚太光通信会议（Asia-Pacific Optical Communications 2008）论文集 . 2008

机译：用于1064 nm的二极管泵浦无源调Q开关Nd：YVO4激光器的AlGaInAs量子阱可饱和吸收体
5. Development of Epitaxial Strategies towards the Growth of Novel Semiconductor Saturable Absorber Mirrors (SESAMs) for Passively Mode-Locked Optically Pumped Vertical-External-Cavity Surface-Emitting Lasers (VECSELs) [D] . Addamane, Sadhvikas J. 2017

机译：外延战略的发展，以发展用于无源锁模光泵浦垂直外腔表面发射激光器（VECSEL）的新型半导体可饱和吸收镜（SESAM）
6. Corrigendum: Can silicon carbide serve as a saturable absorber for passive mode-locked fiber lasers? [O] . Chih-Hsien Cheng, Yung-Hsiang Lin, Ting-Hui Chen, -1

机译：更正：碳化硅能否用作无源锁模光纤激光器的可饱和吸收剂？
7. High-power passively mode-locked Nd:YVO4 laser using SWCNT saturable absorber fabricated by dip coating method [O] . Tang, CY, Chai, Y, Long, H, 2015

机译：采用浸涂法制备的SWCNT可饱和吸收体的大功率无源锁模Nd：YVO4激光器

Diode-pumped passively mode-locked 1342 nm Nd:YVO4 laser with an AlGaInAs quantum-well saturable absorber

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