Tapered lasers emitting at 650 nm with 1 W output power with nearly diffraction-limited beam quality

Pawel Adamiec* Bernd Sumpf Ingo Rüdiger Jörg Fricke Karl-Heinz Hasler Peter Ressel Hans WenzelMartin Zorn Götz Erbert and Günther Tränkle

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Tapered lasers emitting at 650 nm with 1 W output power with nearly diffraction-limited beam quality

机译：锥形激光器在650 nm处发射功率为1 W，光束质量接近衍射极限

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High-brightness tapered lasers emitting around 650 nm were developed. Devices 2mm long with an200-u0001m-long straight section, 1800-u0001m-long tapered section, and 4° taper angle reached 1W output powernin CW operation with a nearly diffraction-limited beam quality. © 2009 Optical Society of America

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《Optics Letters》 |2009年第16期|p.2456-2458|共3页
作者
Pawel Adamiec* Bernd Sumpf Ingo Rüdiger Jörg Fricke Karl-Heinz Hasler Peter Ressel Hans WenzelMartin Zorn Götz Erbert and Günther Tränkle;
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Ferdinand-Braun-Institute für Höchstfrequenztechnik, Gustav-Kirchhoff-Strasse 4, D-12489 Berlin, Germany* Corresponding author: pawel.adamiec@fbh-berlin.de;

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1. Tapered lasers emitting at 650 nm with 1 W output power with nearly diffraction-limited beam quality [J] . Pawel Adamiec, Bernd Sumpf, Ingo Rudiger, Optics Letters . 2009,第16期

机译：锥形激光器在650 nm处发射功率为1 W，几乎没有衍射极限的光束质量
2. 9-W Output Power From an 808-nm Tapered Diode Laser in Pulse Mode Operation With Nearly Diffraction-Limited Beam Quality [J] . Dittmar F., Klehr A., Sumpf B., IEEE journal of selected topics in quantum electronics . 2007,第期

机译：808 nm锥形二极管激光器在脉冲模式下具有近衍射极限光束质量的9 W输出功率
3. 5-W DBR Tapered Lasers Emitting at 1060 nm With a Narrow Spectral Linewidth and a Nearly Diffraction-Limited Beam Quality [J] . Hasler K.-H., Sumpf B., Adamiec P., IEEE Photonics Technology Letters . 2008,第19期

机译：5W DBR锥形激光器在1060 nm处发射，具有窄的谱线宽度和几乎受衍射限制的光束质量
4. 808 nm tapered diode lasers optimised for high output power and nearly diffraction-limited beam quality in pulse mode operation [C] . Ole Bjarlin Jensen, Andreas Klehr, Frank Dittmar, High-Power Diode Laser Technology and Applications V; Proceedings of SPIE-The International Society for Optical Engineering; vol.6456 . 2007

机译：808 nm锥形二极管激光器经过优化，可在脉冲模式下实现高输出功率和接近衍射极限的光束质量
5. Fabrication of high-power diffraction-limited semiconductor tapered lasers and amplifiers. [D] . Cho, Si Hyung. 1998

机译：高功率衍射受限的半导体锥形激光器和放大器的制造。
6. Surface Emitting Tunable Mid-Infrared Laser with High Output Power and Stable Output Beam [O] . Steven Slivken, Donghai Wu, Manijeh Razeghi -1

机译：具有高输出功率和稳定输出光束的表面发射可调中红外激光器
7. 808 nm tapered diode lasers optimized for high output power and nearly diffraction-limited beam quality in pulse mode operation [O] . Jensen Ole Bjarlin, Klehr A., Dittmar F., 2007

机译：808 nm锥形二极管激光器针对脉冲模式操作中的高输出功率和接近衍射限制的光束质量进行了优化

Tapered lasers emitting at 650 nm with 1 W output power with nearly diffraction-limited beam quality

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