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首页> 外文期刊>Organic Electronics >Enhancing the electron transfer process of TiO_2-based DSSC using DC magnetron sputtered ZnO as an efficient alternative for blocking layer
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Enhancing the electron transfer process of TiO_2-based DSSC using DC magnetron sputtered ZnO as an efficient alternative for blocking layer

机译：使用DC磁控溅射ZnO提高基于TiO_2的DSSC的电子转移过程作为阻塞层的有效替代方案

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摘要

Developing dye sensitized solar cell (DSSC) technology by exploiting different alternative semiconductors has attracted research attentions. Among all types of semiconductors, ZnO nanostructures due to their unique electrical properties and the facile preparation of various morphologies, have considered as the promising materials for application in DSSCs. In the present study, DC magnetron sputtering method was utilized to prepare a ZnO thin film as an efficient alternative for TiCl_4 pre-treatment to suppress the charge recombination process occurring at a conventional TiO_2-based DSSC. Different thicknesses of ZnO seed layers on fluorine tin oxide conductive glass substrates (FTO) were prepared via various sputtering deposition times. Field emission-scanning electron microscopy (FE-SEM) and x-ray diffraction (XRD) analyses were utilized to study the surface uniformity and crystallinity of the ZnO nanostructures. Cyclic voltammetry (CV) and electrochemical impedance spectroscopy (EIS) techniques were employed to investigate the photoanode interface properties via determination of the electron lifetime and density of electron in conduction band. The results demonstrated that the thickness of ZnO compact layer which either acts as electron trapping states or blocking layer has the important role in cell performance. Finally, by the optimum thickness of ZnO thin film, the highest efficiency was achieved at 5.1%.
机译：开发染料敏化太阳能电池（DSSC）技术通过开发不同的替代半导体引起了研究关注。在所有类型的半导体中，由于其独特的电性能和各种形态的容易制剂，ZnO纳米结构被认为是在DSSCs中应用的有希望的材料。在本研究中，使用DC磁控溅射方法以制备ZnO薄膜作为TiCl_4预处理的有效替代方案，以抑制在常规TiO_2的DSSC处发生的电荷重组过程。通过各种溅射沉积时间制备氟锡氧化物导电玻璃基板（FTO）上的ZnO种子层的不同厚度。场发射扫描电子显微镜（Fe-SEM）和X射线衍射（XRD）分析用于研究ZnO纳米结构的表面均匀性和结晶度。采用循环伏安法（CV）和电化学阻抗光谱（EIS）技术通过确定导电带中的电子寿命和密度来研究光电码界面性能。结果表明，作为电子捕获状态或阻塞层的ZnO紧凑层的厚度具有在细胞性能中具有重要作用。最后，通过ZnO薄膜的最佳厚度，最高效率达到5.1％。

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