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首页> 外文期刊>Organic Electronics >Side chains contributions to characteristics of resistive memory based on water-soluble polyfluorenes: Effects of structure and length of side pendant group
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Side chains contributions to characteristics of resistive memory based on water-soluble polyfluorenes: Effects of structure and length of side pendant group

机译:侧链对基于水溶性聚芴的电阻记忆特性的贡献:侧挂基团的结构和长度的影响

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摘要

This paper investigates the effects of side chains, which are important structural constituents, on the characteristics of organic resistive memory devices with water-soluble polyflu-orene (WPF) derivatives. The WPF derivatives have either an ethylene oxide (EO) or an alkyl side chain the lengths of the EO side chains are 2,4, or 6 molecules. WPFs exhibit typical bipolar switching behaviors with reliable non-volatile characteristics and good device-to-device uniformity under ambient conditions. WPFs with the EO side chains showed better memory characteristics than those of the alkyl side chains of similar length. In addition, as the EO unit lengthened, the ON/OFF ratio of the memory device gradually increased from 5 × 10~2 to 10~5, and the threshold voltage (V_(th)) progressively decreased from 4 to 3.5 V. The retention times for WPF-hexyl, WPF-20, WPF-40, and WPF-60 are 10~4,200,10~4, and 10~4 s, respectively. The excellent switching properties of WPF-40 and WPF-60 are believed to be mainly attributed to highly localized current pathways and the low trap density.
机译:本文研究了侧链(其为重要的结构组成部分)对具有水溶性聚芴(WPF)衍生物的有机电阻存储器件的特性的影响。 WPF衍生物具有环氧乙烷(EO)或烷基侧链,EO侧链的长度为2,4或6个分子。 WPF具有典型的双极性开关性能,具有可靠的非易失性特性,并且在环境条件下具有良好的器件间一致性。具有EO侧链的WPF表现出比类似长度的烷基侧链更好的记忆特性。此外,随着EO单元的延长,存储设备的ON / OFF比率从5×10〜2逐渐增加到10〜5,阈值电压(V_(th))从4 V逐渐减小到3.5V。 WPF-己基,WPF-20,WPF-40和WPF-60的保留时间分别为10〜4,200,10〜4和10〜4 s。据信WPF-40和WPF-60的出色开关性能主要归因于高度局部化的电流通路和低陷阱密度。

著录项

  • 来源
    《Organic Electronics》 |2014年第6期|1290-1298|共9页
  • 作者单位

    Department of Nanobiomaterials and Electronics, School of Materials Science and Engineering, Heeger Center for Advanced Materials, Cwangju Institute of Science and Technology (GIST), 261 Cheomdan-gwagiro, Buk-gu, Gwangju 500-712, Republic of Korea;

    Korea Atomic Energy Research Institute (KAERI), Radiation Research Division for Industry & Environment, 29 Geumgu-gil, Jeongeup-si, Jeollabuk-do 580-185, Republic of Korea;

    Department of Nanobiomaterials and Electronics, School of Materials Science and Engineering, Heeger Center for Advanced Materials, Cwangju Institute of Science and Technology (GIST), 261 Cheomdan-gwagiro, Buk-gu, Gwangju 500-712, Republic of Korea;

    Department of Nanobiomaterials and Electronics, School of Materials Science and Engineering, Heeger Center for Advanced Materials, Cwangju Institute of Science and Technology (GIST), 261 Cheomdan-gwagiro, Buk-gu, Gwangju 500-712, Republic of Korea;

    Department of Nanobiomaterials and Electronics, School of Materials Science and Engineering, Heeger Center for Advanced Materials, Cwangju Institute of Science and Technology (GIST), 261 Cheomdan-gwagiro, Buk-gu, Gwangju 500-712, Republic of Korea;

    Department of Nanobiomaterials and Electronics, School of Materials Science and Engineering, Heeger Center for Advanced Materials, Cwangju Institute of Science and Technology (GIST), 261 Cheomdan-gwagiro, Buk-gu, Gwangju 500-712, Republic of Korea;

    Department of Nanobiomaterials and Electronics, School of Materials Science and Engineering, Heeger Center for Advanced Materials, Cwangju Institute of Science and Technology (GIST), 261 Cheomdan-gwagiro, Buk-gu, Gwangju 500-712, Republic of Korea;

    Department of Nanobiomaterials and Electronics, School of Materials Science and Engineering, Heeger Center for Advanced Materials, Cwangju Institute of Science and Technology (GIST), 261 Cheomdan-gwagiro, Buk-gu, Gwangju 500-712, Republic of Korea;

    Department of Materials Science and Engineering, University of Texas, Dallas, Richardson, TX 75080, USA;

    Department of Materials Science and Engineering, University of Texas, Dallas, Richardson, TX 75080, USA;

    Department of Nanobiomaterials and Electronics, School of Materials Science and Engineering, Heeger Center for Advanced Materials, Cwangju Institute of Science and Technology (GIST), 261 Cheomdan-gwagiro, Buk-gu, Gwangju 500-712, Republic of Korea;

    Soft Innovative Materials Research Center, Institute of Advanced Composite Materials, Korea Institute of Science and Technology (KIST), San 101, Eunha-ri, Bongdong-eup Wanju-gun, Jeollabuk-do 565-905, Republic of Korea;

    Department of Energy and Materials Engineering, Dongguk University 26 Pil-dong, 3-ga, Jung-gu, Seoul 100-715, Republic of Korea;

    Department of Nanobiomaterials and Electronics, School of Materials Science and Engineering, Heeger Center for Advanced Materials, Cwangju Institute of Science and Technology (GIST), 261 Cheomdan-gwagiro, Buk-gu, Gwangju 500-712, Republic of Korea;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    Organic resistive memory; Bipolar switching; Water-soluble polyfluorene; Ethylene oxide side chain; Conjugated polyelectrolyte;

    机译:有机电阻式记忆;双极开关;水溶性聚芴;环氧乙烷侧链;共轭聚电解质;

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