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机译:侧链对基于水溶性聚芴的电阻记忆特性的贡献:侧挂基团的结构和长度的影响
Department of Nanobiomaterials and Electronics, School of Materials Science and Engineering, Heeger Center for Advanced Materials, Cwangju Institute of Science and Technology (GIST), 261 Cheomdan-gwagiro, Buk-gu, Gwangju 500-712, Republic of Korea;
Korea Atomic Energy Research Institute (KAERI), Radiation Research Division for Industry & Environment, 29 Geumgu-gil, Jeongeup-si, Jeollabuk-do 580-185, Republic of Korea;
Department of Nanobiomaterials and Electronics, School of Materials Science and Engineering, Heeger Center for Advanced Materials, Cwangju Institute of Science and Technology (GIST), 261 Cheomdan-gwagiro, Buk-gu, Gwangju 500-712, Republic of Korea;
Department of Nanobiomaterials and Electronics, School of Materials Science and Engineering, Heeger Center for Advanced Materials, Cwangju Institute of Science and Technology (GIST), 261 Cheomdan-gwagiro, Buk-gu, Gwangju 500-712, Republic of Korea;
Department of Nanobiomaterials and Electronics, School of Materials Science and Engineering, Heeger Center for Advanced Materials, Cwangju Institute of Science and Technology (GIST), 261 Cheomdan-gwagiro, Buk-gu, Gwangju 500-712, Republic of Korea;
Department of Nanobiomaterials and Electronics, School of Materials Science and Engineering, Heeger Center for Advanced Materials, Cwangju Institute of Science and Technology (GIST), 261 Cheomdan-gwagiro, Buk-gu, Gwangju 500-712, Republic of Korea;
Department of Nanobiomaterials and Electronics, School of Materials Science and Engineering, Heeger Center for Advanced Materials, Cwangju Institute of Science and Technology (GIST), 261 Cheomdan-gwagiro, Buk-gu, Gwangju 500-712, Republic of Korea;
Department of Nanobiomaterials and Electronics, School of Materials Science and Engineering, Heeger Center for Advanced Materials, Cwangju Institute of Science and Technology (GIST), 261 Cheomdan-gwagiro, Buk-gu, Gwangju 500-712, Republic of Korea;
Department of Materials Science and Engineering, University of Texas, Dallas, Richardson, TX 75080, USA;
Department of Materials Science and Engineering, University of Texas, Dallas, Richardson, TX 75080, USA;
Department of Nanobiomaterials and Electronics, School of Materials Science and Engineering, Heeger Center for Advanced Materials, Cwangju Institute of Science and Technology (GIST), 261 Cheomdan-gwagiro, Buk-gu, Gwangju 500-712, Republic of Korea;
Soft Innovative Materials Research Center, Institute of Advanced Composite Materials, Korea Institute of Science and Technology (KIST), San 101, Eunha-ri, Bongdong-eup Wanju-gun, Jeollabuk-do 565-905, Republic of Korea;
Department of Energy and Materials Engineering, Dongguk University 26 Pil-dong, 3-ga, Jung-gu, Seoul 100-715, Republic of Korea;
Department of Nanobiomaterials and Electronics, School of Materials Science and Engineering, Heeger Center for Advanced Materials, Cwangju Institute of Science and Technology (GIST), 261 Cheomdan-gwagiro, Buk-gu, Gwangju 500-712, Republic of Korea;
Organic resistive memory; Bipolar switching; Water-soluble polyfluorene; Ethylene oxide side chain; Conjugated polyelectrolyte;
机译:聚酰亚胺分子链长度对有机电阻随机存放记忆特性的影响
机译:聚芴的烷基侧链长度和形状对聚芴与聚正乙烯基咔唑共混物的光致发光光谱和荧光寿命的影响
机译:聚芴的烷基侧链长度和形状对聚芴与聚正乙烯基咔唑共混物的光致发光光谱和荧光寿命的影响
机译:侧苯并噻吩的水溶性共聚物:结构与性能
机译:基于氧化硅的纳米结构中的电阻切换和记忆效应。
机译:Cu / GeSex / W结构中使用热生长的Ge0.2Se0.8膜的电阻和新的光开关存储特性
机译:聚芴片的网络结构与烷基侧链长度的关系
机译:原子层沉积(aLD) - 沉积二氧化钛(TiO2)厚度对Zr40Cu35al15Ni10(ZCaN)/ TiO2 /铟(In)基电阻随机存取存储器(RRam)结构性能的影响。