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首页> 外文期刊>Organic Electronics >Increase in hole mobility in poly (3-hexylthiophene-2,5-diyl) films annealed under electric field during the solvent drying step
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Increase in hole mobility in poly (3-hexylthiophene-2,5-diyl) films annealed under electric field during the solvent drying step

机译：在溶剂干燥步骤中，在电场下退火的聚（3-己基噻吩-2,5-二基）薄膜中的空穴迁移率增加

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摘要

Higher electrical charge carrier mobility in polymer semiconductor films is important to build electronic and opto-electronic devices with improved performance. Application of electric field of the order of 2000 V cm~(-1) during the solvent drying step for the formation of poly (3-hexyl thiophene-2,5-diyl) (P3HT) film is shown to significantly increase the hole carrier mobility. The reasons for increase in mobility by this novel technique are investigated in this paper. The X-ray diffraction measurements confirm the increase in crystallinity of the films for electric-field annealed samples, while the analysis of the data shows increase in the size of the 'crystallites' in those films. The current density-voltage data corresponding to the space charge limited currents at various low temperatures for hole-only devices with P3HT film when fitted to the empirical model for electric-field annealed samples, show an increase in zero field mobility (μ_0) and correspondingly a decrease in activation energy (E_a) and the field dependence pre-factor (γ). The data fitted to the Gaussian disorder model also shows a decrease in the energetic disorder (σ) in the polymer films due to electric-field annealing - indicative of increased ordering of molecules in those films. The analysis confirms the improvement of ordering of the polymer in the film formed due to application of electric field during the solvent drying step of the film formation - a simple processing technique which may be implemented to fabricate higher mobility polymer films for building improved organic electronic devices.
机译：聚合物半导体膜中较高的电荷载流子迁移率对于构建性能提高的电子和光电设备很重要。显示在溶剂干燥步骤中施加2000 V cm〜（-1）的电场以形成聚（3-己基噻吩-2,5-二基）（P3HT）膜，可显着增加空穴载流子流动性。本文研究了通过这种新技术增加流动性的原因。 X射线衍射测量证实了用于电场退火样品的膜的结晶度增加，而数据分析表明这些膜中“微晶”的尺寸增加。对于带有P3HT膜的仅孔器件，当与电场退火样品的经验模型拟合时，对应于各种低温下空间电荷受限电流的电流密度-电压数据显示零场迁移率（μ_0）相应增加活化能（E_a）和场依因数（γ）减小。拟合到高斯紊乱模型的数据还显示，由于电场退火，聚合物薄膜中的高能紊乱（σ）降低-指示这些薄膜中分子的顺序增加。该分析证实了在成膜的溶剂干燥步骤中由于施加电场而形成的膜中聚合物的有序性得到了改善，这是一种简单的加工技术，可以用来制造更高迁移率的聚合物膜，用于构建改进的有机电子器件。

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