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首页> 外文期刊>Organic Electronics >Spin injection and transport in organic spin-valves based on fullerene C_(60)
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Spin injection and transport in organic spin-valves based on fullerene C_(60)

机译:基于富勒烯C_(60)的有机自旋阀中的自旋注入和运输

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摘要

We report the fabrication and magnetoresistance (MR) of the La_(0.67)Sr_(0.33)MnO_3/C_(60)/Co spin valves. The introduction of 1.5 nm A1O_χ barrier between the C_(60) layer and cobalt top electrode prevents effectively interfacial diffusion and Co penetration, and thus an appreciable positive MR (as large as 3.65%) at room temperature was exhibited for the devices in the thickness range (5-40 nm) of C_(60) studied. Possible mechanisms on the MR polarity are proposed. Furthermore, based on the temperature- and thickness- dependent MR and Ⅰ-Ⅴ characteristics, we have obtained clear evidences that the MR of C_(60)-based spin-valves originates from the tunneling of spin-polarized electrons at the low thickness of C_(60), however at the larger thickness (>20 nm) the electrons are injected into and subsequently hopping transport within the C_(60) spacer.
机译:我们报告了La_(0.67)Sr_(0.33)MnO_3 / C_(60)/ Co自旋阀的制造和磁阻(MR)。在C_(60)层和钴顶部电极之间引入1.5 nmAlO_χ阻挡层可有效防止界面扩散和Co渗透,因此,在室温下,该器件在厚度方向上呈现出可观的正MR(高达3.65%) C_(60)的范围(5-40 nm)。提出了关于MR极性的可能机制。此外,基于温度和厚度相关的MR和Ⅰ-Ⅴ特性,我们获得了明确的证据,表明基于C_(60)的自旋阀的MR起源于低厚度的自旋极化电子的隧穿。 C_(60),但是,在较大的厚度(> 20 nm)下,电子被注入C_(60)间隔物中,并随后跃迁。

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  • 来源
    《Organic Electronics》 |2014年第7期|1657-1663|共7页
  • 作者单位

    High Magnetic Field Laboratory, Chinese Academy of Sciences, Shushanhu Road 350, Hefei 230031, PR China;

    High Magnetic Field Laboratory, Chinese Academy of Sciences, Shushanhu Road 350, Hefei 230031, PR China;

    High Magnetic Field Laboratory, Chinese Academy of Sciences, Shushanhu Road 350, Hefei 230031, PR China;

    High Magnetic Field Laboratory, Chinese Academy of Sciences, Shushanhu Road 350, Hefei 230031, PR China;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    Spintronics; Organic semiconductor; Magnetoresistance; Spin transport; Fullerene;

    机译:自旋电子学有机半导体;磁阻旋转运输;富勒烯;

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