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首页> 外文期刊>Organic Electronics >Fluorinated alkyl phosphonic acid SAMs replace PEDOT:PSS in polymer semiconductor devices
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Fluorinated alkyl phosphonic acid SAMs replace PEDOT:PSS in polymer semiconductor devices

机译：氟化烷基膦酸SAM取代聚合物半导体器件中的PEDOT：PSS

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Fluorinated phosphonic acids were self-assembled to form monolayers (SAMs) on indium tin oxide anodes, resulting in work functions that are 0.15-0.4 eV larger than PEDOT:PSS by Kelvin probe. X-ray photoelectron spectroscopy and water contact angle measurements were used to study monolayer growth kinetics and to verify the degree of coverage. Hole-only devices and white polymer light emitting diodes were constructed using unmodified ITO, SAM-modified ITO, and PEDOT:PSS on ITO to investigate the influence of the fluorinated SAMs on hole injection. Hole-only devices indicate improved hole injection compared to PEDOT:PSS. Compared with light-emitting diodes using pure ITO anodes, the SAM-modified devices show improved charge injection and ten times higher luminous efficiency. Compared to devices using PEDOT:PSS, SAM-modified devices show improved brightness and luminous efficiency, although with a slightly larger turn-on voltage. These materials are therefore suitable candidates to replace PEDOT:PSS as a hole injection layer in PLEDs.
机译：氟化膦酸在铟锡氧化物阳极上自组装形成单层（SAMs），通过开尔文（Kelvin）探针得到的功函比PEDOT：PSS大0.15-0.4 eV。使用X射线光电子能谱和水接触角测量来研究单层生长动力学并验证覆盖度。使用未修饰的ITO，SAM修饰的ITO和ITO上的PEDOT：PSS构造仅空穴器件和白色聚合物发光二极管，以研究氟化SAM对空穴注入的影响。仅孔设备表明与PEDOT：PSS相比，空穴注入有所改善。与使用纯ITO阳极的发光二极管相比，SAM改性器件显示出改进的电荷注入和十倍的发光效率。与使用PEDOT：PSS的设备相比，经SAM修改的设备显示出更高的亮度和发光效率，尽管其开启电压略大。因此，这些材料是替代PEDOT：PSS作为PLED中的空穴注入层的合适候选材料。

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