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Defect profiling in organic semiconductor multilayers

机译：有机半导体多层中的缺陷分析

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摘要

Defect depth profile study has been carried out in organic semiconductor (OSC) multilayers to characterize the buried interfaces and layers using beam based positron annihilation spectroscopy. The bilayer and trilayer heterostructures (p-n, p-p and n-p-n) comprise of organic-organic and organic-inorganic (substrate) interfaces. Our study reveals the presence of defects at the interfaces whose concentration is seen to vary with the layer thickness. The S-W correlation has been used to examine the effect of organic materials as well as thickness of the layers on the defect microstructure in multilayers. The nature and type of defects in p-p bilayer are seen to be different as compared to p-n and n-p-n multilayers. Positron mobility in OSC layers has been calculated from the fitted diffusion length which is seen to be of the same order as the effective mobility of charge carrier obtained from the measured current density-voltage (J-V) characteristics. The role of structural defects and the intrinsic electric field at the interfaces on positron systematics is also examined. Positron diffusion modeling together with experimental data suggests that the defect at the interfaces has a stronger influence on the positron systematics than the intrinsic electric field across organic-organic interfaces.
机译：已经使用基于电子束的正电子an没光谱技术在有机半导体（OSC）多层中进行了缺陷深度轮廓研究，以表征掩埋的界面和层。双层和三层异质结构（p-n，p-p和n-p-n）包含有机-有机和有机-无机（底物）界面。我们的研究揭示了界面处存在缺陷，这些缺陷的浓度随层厚度的变化而变化。 S-W相关性已用于检查有机材料的影响以及层的厚度对多层缺陷微结构的影响。与p-n和n-p-n多层相比，p-p双层中缺陷的性质和类型不同。 OSC层中的正电子迁移率是根据拟合的扩散长度计算得出的，该扩散长度与从测得的电流密度-电压（J-V）特性获得的电荷载流子的有效迁移率相同。还检查了结构缺陷和正电子系统界面处固有电场的作用。正电子扩散建模以及实验数据表明，与有机-有机界面上的固有电场相比，界面上的缺陷对正电子系统的影响更大。

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  • 来源
    《Organic Electronics》 |2012年第8期|p.1409-1419|共11页
  • 作者

    Priya Maheshwari; P.K. Pujari; S.K. Sharma; K. Sudarshan; D. Dutta; S. Samanta; A. Singh; D.K. Aswal; R. Ajay Kumar; I. Samajdar;

  • 作者单位

    Radiochemistry Division, Bhabha Atomic Research Centre, Mumbai 400085, India;

    Radiochemistry Division, Bhabha Atomic Research Centre, Mumbai 400085, India;

    Radiochemistry Division, Bhabha Atomic Research Centre, Mumbai 400085, India;

    Radiochemistry Division, Bhabha Atomic Research Centre, Mumbai 400085, India;

    Radiochemistry Division, Bhabha Atomic Research Centre, Mumbai 400085, India;

    Technical Physics Division, Bhabha Atomic Research Centre, Mumbai 400085, India;

    Technical Physics Division, Bhabha Atomic Research Centre, Mumbai 400085, India;

    Technical Physics Division, Bhabha Atomic Research Centre, Mumbai 400085, India;

    Department of Metallurgical Engineering and Material Science, Indian Institute of Technology Bombay, Mumbai 400076, India;

    Department of Metallurgical Engineering and Material Science, Indian Institute of Technology Bombay, Mumbai 400076, India;

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  • 原文格式 PDF
  • 正文语种 eng
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  • 关键词

    positron annihilation spectroscopy; organic semiconductors heterostructures; interfaces; defects;

    机译：正电子an没光谱有机半导体异质结构;接口;缺陷;

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