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首页> 外文期刊>Organic Electronics >Thin-film and single-crystal transistors based on a trifluoromethyl-substituted alternating (thiophene/phenylene)-co-oligomer
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Thin-film and single-crystal transistors based on a trifluoromethyl-substituted alternating (thiophene/phenylene)-co-oligomer

机译：基于三氟甲基取代的交替（噻吩/亚苯基）-共聚低聚物的薄膜和单晶晶体管

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摘要

We demonstrated the performance of thin-film transistors (TFTs) and single-crystal field-effect transistors (FETs) based on a trifluoromethyl-substituted alternating (thiophene/ phenylene)-co-oligomer (AC5-CF3), 1,4-bis(5'-(4"-trifluoromethylphenyl)thiophene-2'-yl)benzene. An FET with a fine AC5-CF3 single-crystal demonstrated field-effect mobility as high as 3.1 cm~2 V~(-1) s~(-1). This value implies that AC5-CF3 must be a useful n-type organic semiconducting material. The performance of AC5-CF3 TFTs depended on the substrate temperatures at which AC5-CF3 thin films were deposited. From the viewpoint of mobility, threshold voltage and sub-threshold slope, we obtained the highest performance at the substrate temperature of 100 ℃. This was because a higher substrate temperature for deposition enlarged the size of grains in AC-CF3 thin films and improved the characteristics of grain boundaries. However, 120 ℃ depositions of AC5-CF3 induced deep valley-like cracks in the thin films, probably because of the difference between the coefficients of thermal expansion for AC5-CF3 thin films and silicon wafer substrates, resulting in effects such as worsening mobility. AC5-CF3 TFTs prepared at 100℃ deposition showed no channel length dependence of the field-effect mobility, and their average field-effect mobility was 0.55 ±0.05 cm~2 V~(-1)s~(-1).
机译：我们展示了基于三氟甲基取代的交替（噻吩/亚苯基）-共聚低聚物（AC5-CF3），1,4-bis的薄膜晶体管（TFT）和单晶场效应晶体管（FET）的性能（5'-（4“-三氟甲基苯基）噻吩-2'-基）苯。具有精细AC5-CF3单晶的FET场效应迁移率高达3.1 cm〜2 V〜（-1）s〜 （-1）。该值表明AC5-CF3必须是有用的n型有机半导体材料。AC5-CF3 TFT的性能取决于沉积AC5-CF3薄膜的基板温度。阈值电压和亚阈值斜率，在100℃的衬底温度下获得了最高的性能，这是因为较高的沉积温度增加了AC-CF3薄膜中晶粒的尺寸并改善了晶界的特性。然而，AC5-CF3的120℃沉积在薄膜proba中引起深谷状裂纹。可能是因为AC5-CF3薄膜和硅晶片基板的热膨胀系数不同，导致诸如迁移率变差的影响。在100℃沉积条件下制备的AC5-CF3薄膜晶体管的沟道长度与场效应迁移率无关，其平均场效应迁移率为0.55±0.05 cm〜2 V〜（-1）s〜（-1）。

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  • 来源
    《Organic Electronics》 |2010年第9期|P.1549-1554|共6页
  • 作者

    Musubu Ichikawa; Tatsuya Kato; Tetsuro Uchino; Takeo Tsuzuki; Masamitsu Inoue; Hyeon-Gu Jeon; Toshiki Koyama; Yoshio Taniguchi;

  • 作者单位

    Functional Polymer Science Course, Division of Chemistry and Materials, Faculty of Textile Science and Technology, Shinshu University, 3-15-1 Tokida, Ueda 386-8567, Japan Presto, Japan Science and Technology Agency (JST), 4-8-1 Honcho, Kawaguchi, Saitama 332-0012, Japan;

    Functional Polymer Science Course, Division of Chemistry and Materials, Faculty of Textile Science and Technology, Shinshu University, 3-15-1 Tokida, Ueda 386-8567, Japan;

    Functional Polymer Science Course, Division of Chemistry and Materials, Faculty of Textile Science and Technology, Shinshu University, 3-15-1 Tokida, Ueda 386-8567, Japan;

    Functional Polymer Science Course, Division of Chemistry and Materials, Faculty of Textile Science and Technology, Shinshu University, 3-15-1 Tokida, Ueda 386-8567, Japan;

    Functional Polymer Science Course, Division of Chemistry and Materials, Faculty of Textile Science and Technology, Shinshu University, 3-15-1 Tokida, Ueda 386-8567, Japan;

    Functional Polymer Science Course, Division of Chemistry and Materials, Faculty of Textile Science and Technology, Shinshu University, 3-15-1 Tokida, Ueda 386-8567, Japan;

    Functional Polymer Science Course, Division of Chemistry and Materials, Faculty of Textile Science and Technology, Shinshu University, 3-15-1 Tokida, Ueda 386-8567, Japan;

    Functional Polymer Science Course, Division of Chemistry and Materials, Faculty of Textile Science and Technology, Shinshu University, 3-15-1 Tokida, Ueda 386-8567, Japan;

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  • 正文语种 eng
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  • 关键词

    organic thin-film transistors; organic field-effect transistors; n-Type semiconductors; alternating co-oligomer; (Thiophene/phenylene)-co-oligomer; electron mobility;

    机译：有机薄膜晶体管;有机场效应晶体管;n型半导体;交替共聚低聚物;（噻吩/亚苯基）-共聚低聚物;电子迁移率;

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