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Effects of different electroplated gate electrodes on electrical performances of flexible organic thin film transistor and flexibility improvement

机译：不同电镀栅电极对柔性有机薄膜晶体管电学性能的影响和柔性的改善

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摘要

Various electroplated metal gate electrodes (Ni, Cu, and Au) on flexible polyimide (PI) substrates were applied to the fabrication of inverted staggered pentacene organic thin film transistors (OTFTs). The metal gate electrodes additively electroplated onto the patterned negative photoresist mask on the Cu(seed)/Cr(adhesion) layers sputter-deposited on the O_2-plasma-treated PI substrates were effective in obtaining good adhesion between the metal gate electrode and organic substrate. It was found that the reduction in the surface roughnesses of the electroplated metal gate and of the subsequently deposited PVP (poly-4-vinyl phenol) gate dielectric layers was a critical factor in improving the device performance. The Ni-gated OTFT exhibited the best electrical characteristics, with a field-effect mobility of ≌0.2 cm~2/V-s and a current on/off ratio of ≌10~3, due to the better chemical stability of the Ni electrode and the smoother surface of the PVP layer on the Ni electrode, as compared to the OTFTs with PVP/Cu or PVP/Au gates. The results of the flexibility test showed that the field-effect mobility and current on/off ratio were not changed significantly when the OTFTs were subjected to 10,000 cyclic bendings with a bending radius of 6 mm in tension mode (outward bending).
机译：柔性聚酰亚胺（PI）衬底上的各种电镀金属栅电极（Ni，Cu和Au）被用于倒置交错并五苯有机薄膜晶体管（OTFT）的制造。在溅射沉积在O_2-等离子处理过的PI基板上的Cu（种子）/ Cr（附着力）层上，将金属栅电极添加电镀到图案化的负光刻胶掩模上，可以有效地获得金属栅电极与有机基板之间的良好附着力。已经发现，电镀金属栅极和随后沉积的PVP（聚-4-乙烯基苯酚）栅极电介质层的表面粗糙度的减小是改善器件性能的关键因素。镍门OTFT表现出最好的电学特性，其场效应迁移率约为0.2 cm〜2 / Vs，电流开/关比约为10〜3，这归因于镍电极和碳纳米管具有更好的化学稳定性。与带有PVP / Cu或PVP / Au栅极的OTFT相比，Ni电极上PVP层的表面更光滑。挠性测试的结果表明，当以张力模式（向外弯曲）将OTFT经受10,000次循环弯曲（弯曲半径为6 mm）时，场效应迁移率和电流通/断比没有明显变化。

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