Differences of interface and bulk transport properties in polymer field-effect devices

Grecu S; Roggenbuck A; Opitz A; Brutting W

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Differences of interface and bulk transport properties in polymer field-effect devices

机译：聚合物场效应器件中界面和整体传输性质的差异

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摘要

The influence of substrate treatment with self-assembled monolayers and thermal annealing was analysed by electrical and structural measurements on field-effect transistors (FETs) and metal insulator-semiconductor (MIS) diodes using poly(3-hexylthiophene) (P3HT) as a semiconducting polymer and Si/SiO2 wafers as a substrate.

机译：通过电和结构测量，以聚（3-己基噻吩）（P3HT）为半导体，通过电学和结构测量分析了场效应晶体管（FET）和金属绝缘体半导体（MIS）二极管对自组装单层衬底处理和热退火的影响。聚合物和Si / SiO2晶片作为衬底。

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来源
《Organic Electronics》 |2006年第5期|p. 276-286|共11页
作者
Grecu S; Roggenbuck A; Opitz A; Brutting W;
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作者单位

Univ Augsburg, D-86135 Augsburg, Germany;

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原文格式 PDF
正文语种 eng
中图分类无线电电子学、电信技术;
关键词
organic transistor; MIS diode; self-assembled monolayer; polythiophene; P3HT; EFFECT TRANSISTORS; POLY(P-PHENYLENE VINYLENE); MOLECULAR-WEIGHT; EMITTING-DIODES; EFFECT MOBILITY; INSULATOR; VOLTAGE; DEPENDENCE;

机译：有机晶体管;MIS二极管;自组装单层;聚噻吩;P3HT;效应晶体管;聚对苯二甲酸乙二烯;分子量;放电二极管;有效流动性;绝缘子;电压;依赖性;

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7. Differences of interface and bulk transport properties in polymer field-effect devices [O] . Grecu, S., Roggenbuck, M., Opitz, A., 2006

机译：聚合物中界面和整体传输性能的差异场效应器件

Differences of interface and bulk transport properties in polymer field-effect devices

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