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Sensitization of thin-film-silicon by a phthalocyanine as strong organic absorber

机译：酞菁作为强有机吸收剂敏化薄膜硅

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摘要

Interfaces of either microcrystalline Si (mu c-Si) on the organic sensitizer phthalocyaninatozinc (PcZn) or of PcZn on amorphous Si (a-Si) were prepared to study the compatibility of the film growth of Si by chemical vapor deposition with the thermal and chemical stability of PcZn. The compatibility could be reached and, composite structures were prepared of a-Si with PcZn by simultaneous deposition. An electronic interaction of Si and PcZn was indicated by an observed fluorescence quenching in PcZn by subsequently deposited mu c-Si. The photoconductivity of a-Si was increased by absorption of light either in subsequently or simultaneously deposited PcZn as seen in photoconductivity spectra. The sensitization of Si by PcZn was thereby proven. The conditions to utilize this effect for a further development of thin film photovoltaic devices are discussed. (C) 2006 Elsevier B.V. All rights reserved.
机译：制备了有机敏化剂酞菁钠锌（PcZn）上的微晶硅（μc-Si）或非晶硅（a-Si）上的PcZn的界面，以研究化学气相沉积硅膜生长与热和热的相容性。 PcZn的化学稳定性。可以达到相容性，并通过同时沉积制备了a-Si与PcZn的复合结构。 Si和PcZn的电子相互作用通过随后沉积的mu c-Si在PcZn中观察到的荧光猝灭来表明。如在光电导光谱中所见，通过在随后或同时沉积的PcZn中吸收光，可以提高a-Si的光电导率。由此证明了PcZn对Si的敏化。讨论了利用该效应进一步发展薄膜光伏器件的条件。 （C）2006 Elsevier B.V.保留所有权利。

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