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Building NVRAM-Aware Swapping Through Code Migration in Mobile Devices

机译:通过移动设备中的代码迁移构建支持NVRAM的交换

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摘要

Mobile applications are becoming increasingly feature-rich and powerful, but also dependent on large main memories, which consume a large portion of system energy, especially for devices equipped with 4/6 GB DRAM. Swapping inactive DRAM pages to byte-addressable, non-volatile memory (NVRAM) is a promising solution to this problem. However, most NVRAMs have limited write endurance and the current victim pages selecting algorithm does not aware it. Therefore, to make it practical, the design of an NVRAM based swapping system must also consider endurance. In this paper, we target at prolonging the lifetime of NVRAM based swap area in mobile devices by reducing the write activities to NVRAM based swap area. Different from traditional wisdom, such as wear leveling and hot/cold data identification, we propose to build a system called nCode, which exploits the fact that code pages are easy to identify, read-only, and therefore a perfect candidate for swapping. Utilizing NVRAM’s byte-addressability, we support execute-in-place (XIP) of the code pages in the swap area, without copying them back to DRAM based main memory. Experimental results based on the Google Nexus 5 smartphone show that nCode can effectively prolong the lifetime of NVRAM under various workloads.
机译:移动应用程序的功能越来越强大,功能越来越强大,但同时也依赖于大型主存储器,这会消耗大量系统能量,尤其是对于配备4/6 GB DRAM的设备。将不活动的DRAM页面交换到字节可寻址的非易失性存储器(NVRAM)是解决此问题的有希望的解决方案。但是,大多数NVRAM具有有限的写耐力,并且当前的受害者页面选择算法无法识别它。因此,要使其实用,基于NVRAM的交换系统的设计还必须考虑耐久性。在本文中,我们旨在通过减少对基于NVRAM的交换区域的写入活动来延长移动设备中基于NVRAM的交换区域的寿命。与传统的观点(例如损耗平衡和热/冷数据识别)不同,我们建议构建一个名为nCode的系统,该系统利用了以下事实:代码页易于识别,只读,因此是交换的理想选择。利用NVRAM的字节寻址能力,我们支持交换区域中的代码页就地执行(XIP),而无需将它们复制回到基于DRAM的主存储器中。基于Google Nexus 5智能手机的实验结果表明,nCode可以有效地延长NVRAM在各种工作负载下的寿命。

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