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Accumulation of geometrically necessary dislocations near grain boundaries in deformed copper

机译：变形铜在晶界附近的几何必要位错的积累

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Cross-correlation-based analysis of electron backscatter diffraction patterns has been used to map the distribution of geometrically necessary dislocation (GND) density in deformed polycrystalline copper. Patterning of the dislocations into high-density cell walls and low-density cell interiors was readily observed at the micron scale. Patterning at the longer length scale of the grain size was also evident with high-density regions (GND hot spots) tending to be in clusters, often found close to some but not all grain boundaries and triple junctions.View full textDownload full textKeywordsEBSD, GNDs, dislocations, deformationRelated var addthis_config = { ui_cobrand: "Taylor & Francis Online", services_compact: "citeulike,netvibes,twitter,technorati,delicious,linkedin,facebook,stumbleupon,digg,google,more", pubid: "ra-4dff56cd6bb1830b" }; Add to shortlist Link Permalink http://dx.doi.org/10.1080/09500839.2012.700412
机译：电子背散射衍射图的基于互相关的分析已用于绘制变形多晶铜中几何必要位错（GND）密度的分布图。在微米级很容易观察到位错进入高密度细胞壁和低密度细胞内部的图案。高密度区域（GND热点）往往呈簇状，通常在一些晶粒边界附近但并非所有晶界和三重结点附近都可以看到，在较长的晶粒尺寸上也有明显的图案。查看全文下载全文全文关键字EBSD，GNDs ，错位，变形相关var addthis_config = {ui_cobrand：“泰勒和弗朗西斯在线”，services_compact：“ citeulike，netvibes，twitter，technorati，delicious，linkedin，facebook，stumbleupon，digg，google，更多”，发布：“ ra-4dff56cd6bb1830b” };添加到候选列表链接永久链接http://dx.doi.org/10.1080/09500839.2012.700412

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