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Cluster-ion bombardment studies to reveal the amorphization mode in strained Si0.8Ge0.2

机译:簇离子轰击研究揭示应变Si 0.8 Ge 0.2 中的非晶化模式

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Radiation damage caused by cluster ions of different sizes is predicted to be distinctly different if materials follow disparate phenomenological models of amorphization, namely overlap and direct amorphization methods. Determination of an amorphization model for a crystalline solid can be accomplished based on its radiation response to cluster sizes of bombarding ions. In the present study, we use this approach and apply it to study radiation damage in Si0.8Ge0.2 caused by Ag n clusters with the number of atoms in a cluster, n, taking values from 1 to 4. The displacements measured by using channeling Rutherford backscattering spectrometry show size-enhanced damage accumulation, which is in good agreement with the atomistic detail obtained by molecular dynamics simulations. Our studies suggest that strained SiGe, a material known to have poor radiation tolerance, follows the overlap model rather than the direct amorphization model.View full textDownload full textKeywordsdefects in solids, radiation effects, semiconductors, strained SiGe, amorphization, cluster-ion bombardmentRelated var addthis_config = { ui_cobrand: "Taylor & Francis Online", services_compact: "citeulike,netvibes,twitter,technorati,delicious,linkedin,facebook,stumbleupon,digg,google,more", pubid: "ra-4dff56cd6bb1830b" }; Add to shortlist Link Permalink http://dx.doi.org/10.1080/09500839.2012.705034
机译:如果材料遵循不同的非晶化现象学模型,即重叠和直接非晶化方法,则由不同尺寸的簇状离子引起的辐射损伤预计会明显不同。结晶固体的非晶化模型的确定可以基于其对轰击离子簇大小的辐射响应来完成。在本研究中,我们使用这种方法并将其应用于研究由Ag n 团簇引起的Si 0.8 Ge 0.2 辐射损伤,其数目为簇中n个原子的取值范围为1到4。使用通道Rutherford背向散射光谱法测量的位移显示出尺寸增强的损伤累积,这与通过分子动力学模拟获得的原子细节非常吻合。我们的研究表明,应变SiGe是一种已知的耐辐射性差的材料,它遵循重叠模型而不是直接非晶化模型。查看全文下载全文addthis_config = {ui_cobrand:“泰勒和弗朗西斯在线”,servicescompact:“ citeulike,netvibes,twitter,technorati,delicious,linkedin,facebook,stumbleupon,digg,google,更多”,发布:“ ra-4dff56cd6bb1830b”};添加到候选列表链接永久链接http://dx.doi.org/10.1080/09500839.2012.705034

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