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Antimicrobial photodynamic therapy of Lactobacillus acidophilus by indocyanine green and 810-nm diode laser

机译:吲哚菁绿和810 nm二极管激光对嗜酸乳杆菌的抗菌光动力治疗

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This study investigated the efficacy of photodynamic therapy (PDT) using EmunDo as a photosensitizer against Lactobacillus acidophilus.A gallium aluminum arsenide diode laser was used in this experiment (810 nm, CW). Standard suspensions of Lactobacillus acidophilus were divided into six groups by treatment: 1) EmunDo, 2) diode laser (100 mW, 90 s), 3) diode laser (300 mW, 30 s); 4) EmunDo + diode laser (100 mW, 90 s), 5) EmunDo + diode laser (300 mW, 30 s), 6) control (no treatment). Bacterial suspensions from each group were subcultured onto the surface of MRS agar plates immediately and 24 h after treatment, and the viable microorganisms of Lactobacillus acidophilus were counted. The data were analyzed by ANOVA and student's t-test at p 0.05.There was a significant between-group difference in the number of Lactobacillus acidophilus colonies in cell cultures obtained at 24 h after treatment (p 0.001). The viable counts were significantly lower in EmunDo and both PDT groups, as compared to the other groups (p 0,05). In the control and laser-irradiated groups, the number of colonies increased significantly at 24 h compared to the immediately after treatment (p 0.05), whereas in both PDT groups, the number of colonies showed a significant reduction after 24 h of therapy (p 0.05).Under the conditions used in this study, L. acidophilus colonies were susceptible to PDT after sensitization with EmunDo and exposure to diode laser. These findings imply that PDT is capable to reduce cariogenic bacteria, potentially leading to more conservative cavity preparation.
机译:本研究探讨了使用EmunDo作为光敏剂对嗜酸乳杆菌的光动力疗法(PDT)的功效。本实验中使用了镓铝砷化物二极管激光器(810 nm,CW)。通过处理将嗜酸乳杆菌的标准悬浮液分为六组:1)EmunDo; 2)二极管激光器(100 mW,90 s); 3)二极管激光器(300 mW,30 s); 4)EmunDo +二极管激光器(100 mW,90 s),5)EmunDo +二极管激光器(300 mW,30 s),6)控制(未处理)。立即和处理后24小时将每组细菌悬浮液在MRS琼脂平板表面继代培养,并计数嗜酸乳杆菌的存活微生物。通过方差分析和学生t检验对数据进行分析(p <0.05)。处理后24小时获得的细胞培养物中嗜酸乳杆菌菌落数量存在显着的组间差异(p <0.001)。与其他组相比,EmunDo和两个PDT组的存活率均显着降低(p <0.05)。在对照组和激光照射组中,与治疗后即刻相比,菌落数在24 h显着增加(p <0.05),而在两个PDT组中,治疗24 h后菌落数均显着减少( p <0.05)。在本研究中使用的条件下,嗜酸乳杆菌菌落在用EmunDo敏化并暴露于二极管激光后易受PDT感染。这些发现表明,PDT能够减少龋齿细菌,可能导致更保守的腔制备。

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