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首页> 外文期刊>Photovoltaics, IEEE Journal of >Easy Plating—A Simple Approach to Suppress Parasitically Metallized Areas in Front Side Ni/Cu Plated Crystalline Si Solar Cells
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Easy Plating—A Simple Approach to Suppress Parasitically Metallized Areas in Front Side Ni/Cu Plated Crystalline Si Solar Cells

机译：易于电镀-一种抑制正面镍/铜镀晶硅太阳能电池中寄生金属化区域的简单方法

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摘要

Plated silicon solar cells with nonoptimized antireflective coatings (ARCs) may feature parasitic plating (PP), i.e., unwanted metal depositions in ARC defects/pinholes. The present work introduces the easy plating sequence that takes advantage of native oxide growth to avoid plating in unwanted ARC pinholes or defects due to the electrical insulation of these defects. This prevents PP for plated solar cells. Independent of the ARC pinhole density, an aesthetic immaculate appearance can be achieved using easy plating. It is shown that it is possible to gain up to 0.5 mA/cm in short-circuit current density and 6 mV in open-circuit voltage compared to the reference plating sequence at Fraunhofer ISE. The importance to avoid drawbacks in terms of contact resistance and contact adhesion due to laser-induced or native oxide at the Si–Ni interface in the easy plating sequence is discussed in detail and important influencing factors in the process chain are lined out. At this stage of development, low contact resistances are possible in some cases but further research is necessary to fully understand the impact of solar cell design and process-related influencing factors. Easy plating can be an option to avoid PP independent of prior ARC pinhole density.
机译：具有未优化抗反射涂层（ARC）的电镀硅太阳能电池可能具有寄生镀层（PP），即ARC缺陷/针孔中不希望有的金属沉积。本工作介绍了一种易于电镀的过程，该过程利用天然氧化物的生长来避免在不需要的ARC针孔或由于这些缺陷的电绝缘而引起的缺陷中进行电镀。这防止了用于电镀太阳能电池的PP。与ARC针孔密度无关，可以通过简单的电镀获得美观的外观。结果表明，与Fraunhofer ISE上的参考电镀顺序相比，短路电流密度最高可提高0.5 mA / cm，开路电压最高可提高6 mV。详细讨论了避免在易镀顺序中由于Si-Ni界面处的激光诱导或天然氧化物引起的接触电阻和接触粘附性方面的缺陷的重要性，并列出了过程链中的重要影响因素。在目前的开发阶段，在某些情况下可能会降低接触电阻，但有必要进行进一步的研究以充分了解太阳能电池设计的影响以及与过程相关的影响因素。与先前的ARC针孔密度无关，可以选择易于电镀来避免PP。

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