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首页> 外文期刊>Photovoltaics, IEEE Journal of >Kerfless Epitaxial Mono Crystalline Si Wafers With Built-In Junction and From Reused Substrates for High-Efficiency PERx Cells
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Kerfless Epitaxial Mono Crystalline Si Wafers With Built-In Junction and From Reused Substrates for High-Efficiency PERx Cells

机译：内置结的无切口外延单晶硅晶圆，来自可重复使用的高效PERx电池基板

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摘要

This paper proposes a kerfless wafer structure with built-in p-n junctions in n-type silicon wafers grown using Crystal Solar's high throughput epitaxy technology. Compared with a conventional p-type emitter by boron diffusion, ion implantation, or epitaxy, the built-in p-type emitter has a reduced and uniform doping concentration and increased thickness. The epitaxially grown wafers and conventional Czochralski (CZ) n-type wafers were processed into solar cells. A best efficiency of 22.5% with epitaxially grown wafers was achieved, with a 6 mV gain in open-circuit voltage, suggesting a high wafer quality and superiority of the deep epitaxial emitter over a standard boron-diffused emitter. Substrate reuse associated with the kerfless epitaxy technology is studied as well, with respect to its impact on solar cell efficiency. The data suggest no degradation in cell efficiency due to substrate reuse.
机译：本文提出了使用Crystal Solar的高通量外延技术生长的n型硅晶片中具有内置p-n结的无切口晶片结构。与通过硼扩散，离子注入或外延形成的传统p型发射极相比，内置的p型发射极具有降低的均匀掺杂浓度和增加的厚度。外延生长的晶片和传统的切克劳斯基（CZ）n型晶片被加工成太阳能电池。外延生长的晶片的最佳效率为22.5％，开路电压增益为6 mV，表明高晶片质量和深外延发射极优于标准硼扩散发射极。还研究了与无切口外延技术相关的基板重用，它对太阳能电池效率产生了影响。数据表明，由于基质的重复使用，电池效率没有降低。

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