...
  • 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Photovoltaics, IEEE Journal of >Investigation of the Mechanism Resulting in low Resistance Ag Thick-Film Contact to Si Solar Cells in the Context of Emitter Doping Density and Contact Firing for Current-Generation Ag Paste
【24h】

Investigation of the Mechanism Resulting in low Resistance Ag Thick-Film Contact to Si Solar Cells in the Context of Emitter Doping Density and Contact Firing for Current-Generation Ag Paste

机译：在当前的Ag膏的发射极掺杂密度和接触放电的背景下导致低电阻Ag厚膜与Si太阳能电池接触的机理研究

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

Screen-printed thick-film Ag metallization has become highly successful in crystalline Si (c-Si) photovoltaics. However, a complete understanding of the mechanism resulting in low resistance contact is still lacking. In order to shed light on this mechanism for current-generation Ag paste, Si solar cells were fabricated using a range of emitter doping densities and contact firing conditions. Low resistance contact was found to vary as a function of emitter surface P concentration ( [Psurface]) and peak firing temperature. Scanning electron microscope (SEM) analysis revealed thin interfacial glass films (IGF) under the bulk Ag gridline. SEM analysis also showed increasing Ag crystallite density as both emitter [Psurface] and peak firing temperature increased. Two mechanisms are proposed in forming low resistance contact to highly doped emitters: 1) formation of ultrathin IGF and/or nano-Ag colloids at low firing temperature, and 2) formation of Ag crystallites at high firing temperature. However, on lightly doped emitters, low resistance contact was achieved only at higher firing temperatures, concomitant with increasing Ag crystallite density, and suggests that thin IGF decorated with nano-Ag colloids may not be sufficient for low resistance contact to lightly doped emitters.
机译：丝网印刷的厚膜银金属化已在晶体硅（c-Si）光伏中取得了巨大成功。但是，仍然缺乏对导致低电阻接触的机理的完整理解。为了阐明这种用于生成现代Ag糊的机理，使用一系列发射极掺杂密度和接触烧结条件制造了Si太阳能电池。发现低电阻接触随发射极表面P浓度（[P surface ]）和峰值烧结温度的变化而变化。扫描电子显微镜（SEM）分析显示在大块Ag网格线下有薄的界面玻璃膜（IGF）。 SEM分析还表明，随着发射体[P surface ]和峰值焙烧温度的升高，Ag微晶密度增加。在形成与高掺杂发射极的低电阻接触中，提出了两种机理：1）在低烧成温度下形成超薄IGF和/或纳米银胶体，以及2）在高烧成温度下形成Ag晶体。然而，在轻掺杂的发射极上，仅在较高的烧成温度下才实现低电阻接触，并伴随着Ag微晶密度的增加，这表明用纳米银胶体修饰的薄IGF可能不足以与轻掺杂的发射极进行低电阻接触。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号