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首页> 外文期刊>Physica status solidi >Impurity Engineering For Germanium-doped Czochralski Silicon Wafer Used For Ultra Large Scale Integrated Circuit
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Impurity Engineering For Germanium-doped Czochralski Silicon Wafer Used For Ultra Large Scale Integrated Circuit

机译：用于超大规模集成电路的掺锗切克劳斯基硅晶片的杂质工程

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摘要

Internal gettering (IG) technology has been challenged by both the reduction of thermal budget during device fabrication and the enlargement of wafer diameter. Improving the properties of Czochralski (Cz) silicon wafers by intentional impurity doping, the so-called 'impurity engineering (IE)', is defined. Germanium has been found to be one of the important impurities for improving the internal gettering effect inrnCz silicon wafer. In this paper, the investigations on IE involved with the conventional furnace anneal based denudation processing for germanium-doped Cz silicon wafer are reviewed. Meanwhile, the potential mechanisms of germanium effects for the IE of Cz silicon wafer are also interpreted based on the experimental facts.
机译：内部吸气（IG）技术一直受到器件制造过程中热预算减少和晶圆直径增大的挑战。定义了通过故意掺杂杂质来改善切克劳斯基（Cz）硅晶片的性能，即所谓的“杂质工程（IE）”。业已发现锗是提高InnCz硅片内部吸杂效果的重要杂质之一。在本文中，对有关掺杂锗的Cz硅片的常规基于炉膛退火的剥蚀工艺的IE的研究进行了综述。同时，根据实验结果，也解释了锗对Cz硅片IE的潜在作用机理。

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