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Thin-film intermediate band photovoltaics: advanced concepts for chalcopyrite solar cells

机译:薄膜中带光伏电池:黄铜矿太阳能电池的高级概念

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摘要

We have studied the potential of thin-film photovoltaic devices provided with an intermediate band (IB). Cu-containing chalcopyrites appear as promising candidates, with maximum theoretical efficiencies above 45% under ideal conditions. This figure has been re-evaluatcd by considering a number of non-idealities, like optical and current losses and non-radiative recombination that affect current chalcopyrite-based devices. Strategies for the practical implementation of IBs in chalcopyrite hosts will be discussed, including the incorporation of foreign impurities in the chalcopyrite structure at sub-stitutional sites of the cation sublattice and the realisation of nanostructured devices.
机译:我们已经研究了具有中间带(IB)的薄膜光伏器件的潜力。含铜黄铜矿似乎是有前途的候选物,在理想条件下,其最大理论效率超过45%。考虑到影响当前基于黄铜矿的器件的许多非理想性,例如光损耗和电流损耗以及非辐射复合,已经对该图进行了重新评估。将讨论在黄铜矿宿主中实际实施IB的策略,包括在阳离子亚晶格的子取代位点的黄铜矿结构中掺入杂质,以及实现纳米结构器件。

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