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首页> 外文期刊>Physica Status Solidi. A, Applied Research >Non-destructive, room temperature characterization of wafer-sized Ⅲ-Ⅴ semiconductor device structures using contactless electromodulation and wavelength-modulated surface photovoltage spectroscopy
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Non-destructive, room temperature characterization of wafer-sized Ⅲ-Ⅴ semiconductor device structures using contactless electromodulation and wavelength-modulated surface photovoltage spectroscopy

机译：晶片尺寸的Ⅲ-Ⅴ半导体器件结构的无损室温表征，采用非接触电调制和波长调制表面光电压光谱法

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摘要

We review the use of the contactless methods of photoreflectance (PR), contactless electroreflectance (CER) and wavelength modulated differential surface photovoltage spectroscopy (DSPS) for the nondestructive, room temperature characterization of a wide variety of wafer-scale Ⅲ-Ⅴ semiconductor device structures. Some systems that will be discussed include heterojunction bipolar transistors (including the determination of the built-in fields/doping levels in the emitter and collector regions, alloy composition, and dc current gain factor), pseudomorphic GaAlAs/InGaAs/GaAs high electron mobility transistors (including the determination of the composition, width, and two-dimensional electron gas density in the channel), InGaAsP/InP quantum well edge emitting lasers (including the detection of p-dopant interdiffu-sion), vertical-cavity surface-emitting lasers (determination of fundamental conduction to heavy-hole ex-citonic transition and cavity mode).
机译：我们综述了光反射（PR），非接触电反射（CER）和波长调制差分表面光电压谱（DSPS）的非接触方法在各种晶圆级Ⅲ-Ⅴ半导体器件结构的无损室温表征中的应用。 。将要讨论的一些系统包括异质结双极晶体管（包括确定发射极和集电极区域的内置场/掺杂水平，合金成分和直流电流增益因子），伪晶形的GaAlAs / InGaAs / GaAs高电子迁移率晶体管（包括确定通道中的成分，宽度和二维电子气密度），InGaAsP / InP量子阱边缘发射激光器（包括对p掺杂互扩散的检测），垂直腔面发射激光器（确定重空穴前子跃迁和腔模的基本传导）。

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