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首页> 外文期刊>Physica status solidi >Comparative Study Between Partially and Fully Recessed-Gate Enhancement-Mode AlGaN/GaN MIS HEMT on the Breakdown Mechanism
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Comparative Study Between Partially and Fully Recessed-Gate Enhancement-Mode AlGaN/GaN MIS HEMT on the Breakdown Mechanism

机译：部分和完全凹入栅增强模式的AlGaN / GaN MIS HEMT在击穿机理上的比较研究

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摘要

In this paper, two enhancement-mode (E-mode) AlGaN/GaN recessed-gate MIS devices with the in situ N-2 plasma treatment, known as partially recessed-gate metal insulator semiconductor (MIS) device and fully recessed-gate MIS device, are designed. Among them, the partially recessed-gate MIS device shows excellent characteristics that the threshold voltage of +3.5 V, saturation current density of 722 mA mm(-1), peak transconductance of 212 mS mm(-1), and the power figure of merit of 4.39 x 10(8) W cm(-2) which is the highest value in E-mode AlGaN/GaN MIS device with the threshold voltage greater than 3 V. Moreover, the current collapse and breakdown voltage of partially recessed-gate MIS device and fully recessed-gate MIS device are investigated, and Silvaco simulation is carried out to analyze the difference of breakdown mechanism between two structure devices. Through the analysis of five main breakdown leakage paths, we can get the conclusion that the factor causing the breakdown voltage difference between partially recessed-gate MIS device and fully recessed-gate MIS device is the difference in the width of depletion region of the two devices.
机译：本文研究了两种采用原位N-2等离子体处理的增强模式（E模式）AlGaN / GaN凹栅MIS器件，称为部分凹栅金属绝缘体半导体（MIS）器件和全凹栅MIS设备，被设计。其中，部分凹入式MIS器件具有出色的特性，其阈值电压为+3.5 V，饱和电流密度为722 mA mm（-1），峰值跨导为212 mS mm（-1），并且功率系数为优点为4.39 x 10（8）W cm（-2），这是阈值电压大于3 V的E模式AlGaN / GaN MIS器件中的最大值。此外，部分凹入式栅极的电流崩溃和击穿电压研究了MIS器件和全凹栅MIS器件，并进行了Silvaco仿真，分析了两种结构器件之间击穿机理的差异。通过对五个主要击穿泄漏路径的分析，我们可以得出结论，导致部分凹入栅极MIS器件和完全凹入栅极MIS器件之间的击穿电压差的因素是两个器件的耗尽区宽度之差。

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  • 来源
    《Physica status solidi》 |2019年第16期|1900115.1-1900115.6|共6页
  • 作者

    He Yunlong; Gao Hao; Wang Chong; Zhao Yaopeng; Lu Xiaoli; Zhang Chunfu; Zheng Xuefeng; Guo Lixin; Ma Xiaohua; Hao Yue;

  • 作者单位

    Xidian Univ, Sch Microelect, State Key Discipline Lab Wide Band Gap Semicond T, Xian 710071, Shaanxi, Peoples R China;

    Xidian Univ, Sch Microelect, State Key Discipline Lab Wide Band Gap Semicond T, Xian 710071, Shaanxi, Peoples R China;

    Xidian Univ, Sch Microelect, State Key Discipline Lab Wide Band Gap Semicond T, Xian 710071, Shaanxi, Peoples R China;

    Xidian Univ, Sch Microelect, State Key Discipline Lab Wide Band Gap Semicond T, Xian 710071, Shaanxi, Peoples R China;

    Xidian Univ, Sch Microelect, State Key Discipline Lab Wide Band Gap Semicond T, Xian 710071, Shaanxi, Peoples R China;

    Xidian Univ, Sch Microelect, State Key Discipline Lab Wide Band Gap Semicond T, Xian 710071, Shaanxi, Peoples R China;

    Xidian Univ, Sch Microelect, State Key Discipline Lab Wide Band Gap Semicond T, Xian 710071, Shaanxi, Peoples R China;

    Xidian Univ, Sch Microelect, Sch Phys & Optoelect Engn, Xian 710071, Shaanxi, Peoples R China;

    Xidian Univ, Sch Microelect, State Key Discipline Lab Wide Band Gap Semicond T, Xian 710071, Shaanxi, Peoples R China;

    Xidian Univ, Sch Microelect, State Key Discipline Lab Wide Band Gap Semicond T, Xian 710071, Shaanxi, Peoples R China;

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  • 正文语种 eng
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  • 关键词

    AlGaN; GaN; breakdown mechanism; enhancement-mode; metal insulator semiconductor-high electron mobility transistors (MIS-HEMT);

    机译：Algan;GaN;击穿机制;增强模式;金属绝缘体半导体高电子迁移率晶体管（MIS-HEMT）;

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