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首页> 外文期刊>Physica status solidi >Microstructural Analysis of Local Silicon Corrosion of Bifacial Solar Cells as Root Cause of Potential-Induced Degradation at the Rear Side
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Microstructural Analysis of Local Silicon Corrosion of Bifacial Solar Cells as Root Cause of Potential-Induced Degradation at the Rear Side

机译：双面太阳能电池局部硅腐蚀的微观结构分析，其是背面电势降解的根本原因

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摘要

Bifacial passivated emitter and rear cells (PERC+) can suffer from potential-induced degradation (PID) of the rear side. Rear-side PID tests of industrial solar cells lead to more than 12% power degradation that is not recoverable under illumination or dark storage. A microstructural root-cause analysis of the rear side reveals localized spots with increased carrier recombination as the origin of the power losses. Morphology and defect distribution depend on the temperature (60 and 85 degrees C) applied for PID acceleration. Individual defects are analyzed at the atomic level, revealing a corrosion of the silicon bulk at the Si/AlOx interface. A laterally extending Na accumulation at the interface and an increased concentration of further impurities are observed together with large stacking fault defects. The formation of the defects will be discussed within a simple model for a cathodic corrosion of Si and the impact of interfacial contaminations during solar cell processing.
机译：双面钝化的发射极和背面电池（PERC +）可能会遭受背面的电势诱导降解（PID）。工业太阳能电池的背面PID测试导致超过12％的功率下降，在光照或黑暗存储下无法恢复。后侧的微观结构根本原因分析显示，载流子重组增加的局部斑点是功率损失的根源。形态和缺陷分布取决于PID加速所应用的温度（60和85摄氏度）。在原子水平上分析了单个缺陷，揭示了硅块在Si / AlOx界面处的腐蚀。观察到界面处Na的横向扩展和其他杂质浓度的增加以及大量的堆垛层错。缺陷的形成将在硅的阴极腐蚀和太阳能电池加工过程中界面污染的影响的简单模型中讨论。

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