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首页> 外文期刊>Physica status solidi (a) Applications and materials science >Metalorganic Chemical Vapor Deposition Gallium Nitride with Fast Growth Rate for Vertical Power Device Applications
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Metalorganic Chemical Vapor Deposition Gallium Nitride with Fast Growth Rate for Vertical Power Device Applications

机译：金属有机化学气相沉积氮化镓，具有垂直动力装置应用的快速生长速率

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摘要

The development of high-quality gallium nitride (GaN) epitaxy with thick drift layer, low controllable doping, and high mobility is key for vertical high-power devices. Herein, the effect of increasing trimethylgallium (TMGa) molar flow rate on the growth rate, impurity incorporation, charge compensation, surface morphology, and carrier mobility is systematically studied. An optimized metalorganic chemical vapor deposition GaN growth condition with a typical growth rate of 2 μm h~(-1) is used as the baseline. With significant suppression of background Si, other impurity concentrations, and a precise control of the doping precursor SiH_4 flow, an electron concentration as low as 4 ×10~(15) cm~(-3) in n~--GaN is achieved. Through increasing the TMGa flow rate, the GaN growth rate is increased to 5.2 μm h~(-1). Secondary ion mass spectroscopy results show that the background H, O, and Mg remain below detection limit, but C level is increased to 2 ×10~(16) cm~(-3). GaN growth on Mn-doped semi-insulating GaN substrate is performed to probe the transport properties of film with low dislocation densities. Hall measurement shows that an electron mobility decreases from 852 to 604 cm~2 V~(-1) s~(-1) as the growth rate increases. Results from this work reveal the challenge and guidance for achieving GaN vertical high power devices.
机译：具有厚漂移层的高质量氮化镓（GaN）外延的开发，低可控掺杂和高移动性是垂直大功率器件的键。在本文中，系统地研究了增加三甲基镓（TMGA）摩尔流速对生长速率，杂质掺入，电荷补偿，表面形态和载流子迁移率的影响。优化的金属化学气相沉积GaN生长条件具有2μmH〜（-1）的典型生长速率作为基线。通过显着抑制背景Si，其他杂质浓度和掺杂前体SiH_4流动的精确控制，实现了N〜 - ℃下低至4×10〜（15）cm〜（-3）的电子浓度。通过增加TMGA流速，GaN生长速率增加到5.2μmH〜（-1）。二次离子质谱结果表明，背景H，O和MG仍然低于检测极限，但C电平增加到2×10〜（16）cm〜（-3）。进行Mn掺杂半绝缘GaN衬底上的GaN生长以探测具有低脱位密度的薄膜的运输特性。霍尔测量表明，随着生长速率的增加，电子迁移率从852到604cm〜2V〜（-1）S〜（-1）减小。这项工作的结果揭示了实现GaN立式大功率器件的挑战和指导。

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