...
机译:GaN与立方冰之间的热边界电阻和立方冰的THz声衰减谱。
Department of Electrical Engineering and Graduate Institute of Photonics and Optoelectronics, National Taiwan University, Taipei 10617, Taiwan;
Department of Electrical Engineering and Graduate Institute of Photonics and Optoelectronics, National Taiwan University, Taipei 10617, Taiwan;
Department of Electrical Engineering and Graduate Institute of Photonics and Optoelectronics, National Taiwan University, Taipei 10617, Taiwan;
Institute of Electro-Optical Science and Engineering and Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 70101, Taiwan;
Department of Electrical Engineering and Graduate Institute of Photonics and Optoelectronics, National Taiwan University, Taipei 10617, Taiwan Molecular Imaging Center, National Taiwan University, Taipei 10617, Taiwan Institute of Physics, Academia Sinica, Taipei 115, Taiwan;
thermal properties of crystalline solids; ultrasonic relaxation;
机译:热边界层对外壳的声阻抗的影响以及对声感测设备的影响
机译:立方和六角形GaN / Al2O3超晶格中的声子声子动力学
机译:立方和六角形GaN / Al2O3超晶格中的声子声子动力学
机译:由于硼掺杂的Ni_3Al合金的晶界偏析中的Ni_3Al相晶格中包含了硼,因此从简单的立方晶到面心立方以及三角相变
机译:优化和次优两个自由度衬里公差对建模的入口声衰减和高温下法向入射阻抗测量的影响。
机译:使用可调带宽的GHz-sub THz范围内的可调声子源进行相干声子传输测量和受控声激发
机译:立方GaN /(Al,Ga)N单量子阱中的皮秒声学
机译:结合GaN衬底热边界电阻的氮化镓(GaN)高电子迁移率晶体管(HEmT)器件的混合多栅模型。