Microscopic Basis for the Mechanism of Carrier Dynamics in an Operating p-n Junction Examined by Using Light-Modulated Scanning Tunneling Spectroscopy

Shoji Yoshida; Yuya Kanitani; Ryuji Oshima; Yoshitaka Okada; Osamu Takeuchi; Hidemi Shigekawa

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Microscopic Basis for the Mechanism of Carrier Dynamics in an Operating p-n Junction Examined by Using Light-Modulated Scanning Tunneling Spectroscopy

机译：使用光调制扫描隧道光谱法研究工作p-n结中载流子动力学机理的微观基础

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The doping characteristics and carrier transport in a GaAs p-n junction were visualized with a ～10 nm spatial resolution, using light-modulated scanning tunneling spectroscopy. The dynamics of minority carriers under operating conditions, such as recombination, diffusion, and electric field induced drift, which had previously been analyzed on the basis of empirical electric properties, were successfully examined on the nanoscale. These results provide a solid basis for elucidating the mechanism of the carrier transport properties predicted by using the macroscopic analysis.

机译：利用光调制扫描隧道光谱技术，以〜10 nm的空间分辨率显示了GaAs p-n结中的掺杂特性和载流子传输。已经在纳米尺度上成功地检查了先前在经验电性能的基础上进行分析的，在诸如重组，扩散和电场引起的漂移等操作条件下的少数载流子的动力学。这些结果为阐明使用宏观分析预测的载流子传输特性的机理提供了坚实的基础。

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来源
《Physical review letters》 |2007年第2期|p.026802.1-026802.4|共4页
作者
Shoji Yoshida; Yuya Kanitani; Ryuji Oshima; Yoshitaka Okada; Osamu Takeuchi; Hidemi Shigekawa;
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作者单位

Institute of Applied Physics, CREST-JST, 21st COE, University of Tsukuba, Tsukuba 305-8573 Japan;

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原文格式 PDF
正文语种 eng
中图分类物理学;
关键词
scanning tunneling and atomic force microscopy; Ⅲ-Ⅴ semiconductor-to-semiconductor contacts; p-n junctions; and heterojunctions; novel experimental methods; measurements;

机译：扫描隧道和原子力显微镜;Ⅲ-Ⅴ族半导体与半导体的接触;p-n结;和异质结;新颖的实验方法;测量;

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专利

1. Nanoscale Mapping of Built-in Potential in GaAs p-n Junction Using Light-Modulated Scanning Tunneling Microscopy [J] . Shoji Yoshida, Yuya Kanitani, Ryuji Oshima, Japanese journal of applied physics . 2008,第7issue3期

机译：使用光调制扫描隧道显微镜在GaAs p-n结中内置势的纳米级映射
2. Scanning resonant tunneling spectroscopy of fullerene molecules on Si surfaces for carrier density profiling across p-n junctions [J] . Leonid Bolotov, Toshiko Okui, Toshihiko Kanayama Applied Physics Letters . 2005,第13期

机译：硅表面富勒烯分子的扫描共振隧穿光谱法，用于跨p-n结的载流子密度分布
3. Measurements of Electrostatic Potential Across p-n Junctions on Oxidized Si Surfaces by Scanning Multimode Tunneling Spectroscopy [J] . Leonid Bolotov, Tetsuya Tada, Masanori litake, Japanese journal of applied physics . 2011,第4ISSUE2期

机译：扫描多模隧穿光谱法测量氧化硅表面上p-n结两端的静电势
4. Simultaneous potential and dopant mapping at p-n junctions using scanning tunneling microscopy [C] . N D Jaeger, M Marso, K Urban, Conference on microscopy of semiconducting materials . 2003

机译：使用扫描隧穿显微镜在P-N结的同时潜在和掺杂剂映射
5. Scanning tunneling microscopy and spectroscopy of single molecules and nanocrystals in double-barrier tunnel junctions. [D] . Mikaelian, Gareguin R. 2006

机译：双势垒隧道结中单分子和纳米晶体的扫描隧道显微镜和光谱学。
6. Growthof an Ultrathin Zirconia Film on Pt3Zr Examined by High-ResolutionX-ray Photoelectron SpectroscopyTemperature-Programmed Desorption Scanning Tunneling Microscopyand Density Functional Theory [O] . Hao Li, Joong-Il Jake Choi, Wernfried Mayr-Schmölzer, -1

机译：成长性高分辨率检查Pt3Zr上超薄氧化锆膜的制备X射线光电子能谱程序升温解吸扫描隧道显微镜和密度泛函理论
7. Microscopic Basis for the Mechanism of Carrier Dynamics in an Operating p-n Junction Examined by Using Light-Modulated Scanning Tunneling Spectroscopy [O] . Yoshida Shoji, Kanitani Yuya, Oshima Ryuji, 2007

机译：使用光调制扫描隧道光谱法研究工作p-n结中载流子动力学机理的微观基础
8. Mixed Tunneling and Avalanche Mechanisms in p-n Junctions and Their Effects on Microwave Transit-Time Devices. [R] . Haddad, G. I., Elta, M. E. 1977

机译：p-n结中的混合隧穿和雪崩机制及其对微波传输时间器件的影响。

Microscopic Basis for the Mechanism of Carrier Dynamics in an Operating p-n Junction Examined by Using Light-Modulated Scanning Tunneling Spectroscopy

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