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In Situ Observation of Thermal Relaxation of Interstitial-Vacancy Pair Defects in a Graphite Gap

机译:石墨间隙中间隙空位对缺陷热弛豫的原位观察

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Direct observation of individual defects during formation and annihilation in the interlayer gap of double-wall carbon nanotubes (DWNT) is demonstrated by high-resolution transmission electron microscopy. The interlayer defects that bridge two adjacent graphen layers in DWNT are stable for a macroscopic time at the temperature below 450 K. These defects are assigned to a cluster of one or two interstitial-vacancy pairs (I-V pairs) and often disappear just after their formation at higher temperatures due to an instantaneous recombination of the interstitial atom with vacancy. Systematic observations performed at the elevated temperatures find a threshold for the defect annihilation at 450-500 K, which, indeed, corresponds to the known temperature for the Wigner energy release.
机译:通过高分辨率透射电子显微镜可直接观察到双壁碳纳米管(DWNT)的层间间隙在形成和an灭期间的单个缺陷。在低于450 K的温度下,桥接DWNT中两个相邻石墨烯层的层间缺陷在宏观时间内是稳定的。这些缺陷被分配给一个或两个间隙空位对(IV对)的簇,并且通常在它们形成后消失在较高的温度下,由于间隙原子与空位的瞬时重组。在升高的温度下进行的系统观察发现了在450-500 K时发生an灭的阈值,该阈值确实对应于维格纳能量释放的已知温度。

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