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Anomalous spin-dependent tunneling statistics in Fe/MgO/Fe junctions induced by disorder at the interface

机译：Fe / MgO / Fe交界处因界面无序引起的自旋依赖性隧穿统计

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摘要

We present first-principles analysis of interfacial disorder effects on spin-dependent tunneling statistics in thin Fe/MgO/Fe magnetic tunnel junctions. We find that interfacial disorder scattering can significantly modulate the tunneling statistics in the minority spin of the parallel configuration (PC) while all other spin channels remain dominated by the Poissonian process. For the minority-spin channel of PC, interfacial disorder scattering favors the formation of resonant tunneling channels by lifting the limitation of symmetry conservation at low concentration, presenting an important sub-Poissonian process in PC, but is destructive to the open channels at high concentration. We find that the important modulation of tunneling statistics is independent of the type of interfacial disorder. A bimodal distribution function of transmission with disorder dependence is introduced and fits very well our first-principles results. The increase of MgO thickness can quickly change the tunneling from a sub-Poissonian to Poissonian dominated process in the minority spin of PC with disorder. Our results provide a sensitive detection method of an ultralow concentration of interfacial defects.
机译：我们目前对薄Fe / MgO / Fe磁性隧道结中自旋依赖性隧穿统计数据的界面紊乱影响的第一性原理分析。我们发现界面无序散射可以显着地调节并行配置（PC）的少数自旋中的隧穿统计，而所有其他自旋通道仍由泊松过程主导。对于PC的少数自旋通道，界面紊乱散射通过解除低浓度对称守恒的限制而促进了共振隧穿通道的形成，这在PC中呈现出重要的亚泊松过程，但对高浓度下的开放通道具有破坏性。我们发现，隧道统计的重要调制方式与界面紊乱的类型无关。引入具有障碍依赖性的传播的双峰分布函数，并且非常适合我们的第一原理结果。 MgO厚度的增加可以迅速改变具有PC的少数自旋中的从亚Poissonian到Poissonian主导的过程。我们的结果提供了一种超低浓度的界面缺陷的灵敏检测方法。

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  • 来源
    《Physical review》 |2018年第1期|014404.1-014404.5|共5页
  • 作者

    Jiawei Yam; Shizhuo Wang; Ke Xia; Youqi Ke;

  • 作者单位

    Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China,School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China,University of Chinese Academy of Sciences, Beijing 100049, China;

    College of Physics and Electronic Engineering, Zhengzhou University of Light Industry, Zhengzhou 450002, China;

    Center for Advanced Quantum Studies and Department of Physics, Beijing Normal University, Beijing 100875, China;

    Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China,School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China,University of Chinese Academy of Sciences, Beijing 100049, China;

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