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首页> 外文期刊>Physical review >Field control of anisotropic spin transport and spin helix dynamics in a modulation-doped GaAs quantum well
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Field control of anisotropic spin transport and spin helix dynamics in a modulation-doped GaAs quantum well

机译：调制掺杂GaAs量子阱中各向异性自旋输运和自旋螺旋动力学的场控制

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摘要

Electron spin transport and dynamics are investigated in a single, high-mobility, modulation-doped, GaAs quantum well using ultrafast two-color Kerr-rotadon microspectroscopy, supported by qualitative kinetic theory simulations of spin diffusion and transport. Evolution of the spins is governed by the Dresselhaus bulk and Rashba structural inversion asymmetries, which manifest as an effective magnetic field that can be extracted directly from the experimental coherent spin precession. A spin-precession length λ_(SOI) is defined as one complete precession in the effective magnetic field. It is observed that application of (i) an out-of-plane electric field changes the spin decay time and λ_(SOI) through the Rashba component of the spin-orbit coupling, (ii) an in-plane magnetic field allows for extraction of the Dresselhaus and Rashba parameters, and (iii) an in-plane electric field markedly modifies both the λ_(SOI) and diffusion coefficient.
机译：使用超快速两色Kerr-rotadon显微技术，在自旋扩散和输运的定性动力学理论模拟的支持下，在单个高迁移率，调制掺杂的GaAs量子阱中研究了电子自旋输运和动力学。自旋的演化受Dresselhaus体和Rashba结构反演不对称的支配，这表现为可以直接从实验相干自旋进动中提取的有效磁场。自旋进动长度λ_（SOI）被定义为有效磁场中的一个完整进动。观察到，（i）平面外电场的施加通过自旋轨道耦合的Rashba分量改变了自旋衰减时间和λ_（SOI），（ii）平面内磁场允许提取（Dresselhaus和Rashba参数），以及（iii）平面电场显着改变λ_（SOI）和扩散系数。

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  • 来源
    《Physical review》 |2018年第12期|125410.1-125410.10|共10页
  • 作者

    S. Anghel; F. Passmann; A. Singh; C. Ruppert; A. V. Poshakinskiy; S. A. Tarasenko; J. N. Moore; G. Yusa; T. Mano; T. Noda; X. Li; A. D. Bristow; M. Betz;

  • 作者单位

    Experimentelle Physik 2, Technische Universitat Dortmund, Otto-Hahn-StrafSe 4a, D-44227 Dortmund, Germany;

    Experimentelle Physik 2, Technische Universitat Dortmund, Otto-Hahn-StrafSe 4a, D-44227 Dortmund, Germany;

    Department of Material Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA;

    Experimentelle Physik 2, Technische Universitat Dortmund, Otto-Hahn-StrafSe 4a, D-44227 Dortmund, Germany;

    Ioffe Institute, St. Petersburg 194021, Russia;

    Ioffe Institute, St. Petersburg 194021, Russia;

    Department of Physics, Tohoku University, Sendai 980-8578, Japan;

    Department of Physics, Tohoku University, Sendai 980-8578, Japan;

    National Institute for Materials Science, Tsukuba, Ibaraki 305-0047, Japan;

    National Institute for Materials Science, Tsukuba, Ibaraki 305-0047, Japan;

    Texas Materials Institute, University of Texas at Austin, Austin, Texas 78712, USA;

    Experimentelle Physik 2, Technische Universitat Dortmund, Otto-Hahn-StrafSe 4a, D-44227 Dortmund, Germany,Department of Physics and Astronomy. West Virginia University, Morgantown, West Virginia 26506-6315, USA;

    Experimentelle Physik 2, Technische Universitat Dortmund, Otto-Hahn-StrafSe 4a, D-44227 Dortmund, Germany;

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