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首页> 外文期刊>Physical review >Breaking the current density threshold in spin-orbit-torque magnetic random access memory
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Breaking the current density threshold in spin-orbit-torque magnetic random access memory

机译：打破自旋轨道转矩磁性随机存取存储器中的电流密度阈值

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摘要

Spin-orbit-torque magnetic random access memory (SOT-MRAM) is a promising technology for the next generation of data storage devices. The main bottleneck of this technology is the high reversal current density threshold. This outstanding problem is now solved by a new strategy in which the magnitude of the driven current density is fixed while the current direction varies with time. The theoretical limit of minimal reversal current density is only a fraction (the Gilbert damping coefficient) of the threshold current density of the conventional strategy. The Euler-Lagrange equation for the fastest magnetization reversal path and the optimal current pulse is derived for an arbitrary magnetic cell and arbitrary spin-orbit torque. The theoretical limit of minimal reversal current density and current density for a GHz switching rate of the new reversal strategy for CoFeB/Ta SOT-MRAMs are, respectively, of the order of 10~5 A/cm~2 and 10~6 A/cm~2 far below 10~7 A/cm~2 and 10~8 A/cm~2 in the conventional strategy. Furthermore, no external magnetic field is needed for a deterministic reversal in the new strategy.
机译：自旋轨道转矩磁性随机存取存储器（SOT-MRAM）是下一代数据存储设备的一项有前途的技术。该技术的主要瓶颈是高反向电流密度阈值。现在，这个悬而未决的问题通过一种新策略得以解决，其中，驱动电流密度的大小固定，而电流方向随时间变化。最小反向电流密度的理论极限仅为常规策略的阈值电流密度的一小部分（吉尔伯特阻尼系数）。对于任意磁性单元和任意自旋轨道转矩，得出了最快的磁化反向路径和最佳电流脉冲的欧拉-拉格朗日方程。 CoFeB / Ta SOT-MRAM的新反转策略的最小反转电流密度和GHz切换速率的电流密度的理论极限分别为10〜5 A / cm〜2和10〜6 A /常规策略中，cm〜2远低于10〜7 A / cm〜2和10〜8 A / cm〜2。此外，在新策略中确定性逆转不需要外部磁场。

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  • 来源
    《Physical review》 |2018年第14期|489-494|共6页
  • 作者

    Yin Zhang; H. Y. Yuan; X. S. Wang; X. R. Wang;

  • 作者单位

    Physics Department, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong,HKUST Shenzhen Research Institute, Shenzhen 518057, China;

    Department of Physics, Southern University of Science and Technology, Shenzhen 518055, China;

    Physics Department, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong,School of Microelectronics and Solid-State Electronics, University of Electronic Science and Technology of China,Chengdu, Sichuan 610054, China;

    Physics Department, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong,HKUST Shenzhen Research Institute, Shenzhen 518057, China;

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  • 正文语种 eng
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  • 关键词

    144416.1-144416.6;

    机译：144416.1-144416.6;

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