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Electronic properties of one-dimensional nanostructures of the Bi_2Se_3 topological insulator

机译：Bi_2Se_3拓扑绝缘体的一维纳米结构的电子性质

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摘要

We theoretically study the electronic structure and spin properties of one-dimensional nanostructures of the prototypical bulk topological insulator Bi_2Se_3. Realistic models of experimentally observed Bi_2Se_3 nanowires and nanoribbons are considered using the tight-binding method. At low energies, the band structures are composed of a series of evenly spaced degenerate subbands resulting from circumferential confinement of the topological surface states. The direct band gaps due to the nontrivial π Berry phase show a clear dependence on the circumference. The spin-momentum locking of the topological surface states results in a pronounced 2n spin rotation around the circumference with the degree of spin polarization dependent on the momentum along the nanostructure. Overall, the band structures and spin textures are more complicated for nanoribbons, which expose two distinct facets. The effects of reduced dimensionality are rationalized with the help of a simple model that considers circumferential quantization of the topological surface states. Furthermore, the surface spin density induced by an electric current along the nanostructure shows a pronounced oscillatory dependence on the charge-carrier energy, which can be exploited in spintronics applications.
机译：我们从理论上研究了典型的本体拓扑绝缘体Bi_2Se_3的一维纳米结构的电子结构和自旋特性。使用紧密结合方法考虑了实验观察到的Bi_2Se_3纳米线和纳米带的真实模型。在低能量下，能带结构由一系列由拓扑表面态的周向约束产生的均匀间隔的简并子带组成。非平凡的πBerry相导致的直接带隙显示出对周长的明显依赖性。拓扑表面状态的自旋动量锁定导致围绕圆周的明显2n自旋旋转，自旋极化的程度取决于沿着纳米结构的动量。总体而言，纳米带的能带结构和自旋纹理更为复杂，因为纳米带暴露出两个截然不同的面。借助一个考虑了拓扑表面状态的周向量化的简单模型，可以使降维的影响合理化。此外，由电流沿着纳米结构感应的表面自旋密度显示出对电荷载流子能量的明显振荡依赖性，这可以在自旋电子学应用中得到利用。

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  • 来源
    《Physical review》 |2018年第16期|165411.1-165411.9|共9页
  • 作者

    Naunidh Virk; Gabriel Autes; Oleg V. Yazyev;

  • 作者单位

    Institute of Physics, Ecole Polytechnique Federate de Lausanne, CH-1015 Lausanne, Switzerland;

    Institute of Physics, Ecole Polytechnique Federate de Lausanne, CH-1015 Lausanne, Switzerland;

    Institute of Physics, Ecole Polytechnique Federate de Lausanne, CH-1015 Lausanne, Switzerland;

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