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Structure-dependent magnetoresistance and spin-transfer torque in antiferromagnetic Fe|MgO|FeMn|Cu tunnel junctions

机译:Fe | MgO | FeMn | Cu隧道结中与结构有关的磁阻和自旋传递扭矩

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摘要

We predict large magnetoresistance (MR) and spin transfer torque (STT) in antiferromagnetic Fe|MgO|FeMn|Cu tunnel junctions based on first-principles scattering theory. MR as large as ~100% is found in one junction. Magnetic dynamic simulations show that STT acting on the antiferromagnetic order parameter dominates the spin dynamics, and an electronic bias of order 10~(_1) mV and current density of order 10~5 Acm~(-2) can switches a junction of three-layer MgO, they are about one order smaller than that in Fe|MgO|Fe junction with the same barrier thickness, respectively. The multiple scattering in the antiferromagnetic region is considered to be responsible for the enhanced spin torque and smaller switching current density.
机译:基于第一性原理散射理论,我们预测了反铁磁Fe | MgO | FeMn | Cu隧道结中的大磁阻(MR)和自旋传递转矩(STT)。在一个路口发现MR高达〜100%。磁动力学模拟表明,作用于反铁磁阶数参数的STT决定了自旋动力学,并且10〜(_1)mV阶的电子偏置和10〜5 Acm〜(-2)阶的电流密度可以切换三个在具有相同势垒厚度的Fe | MgO | Fe结中,它们分别比MgO层小约一个数量级。反铁磁区域中的多重散射被认为是导致自旋扭矩增加和开关电流密度减小的原因。

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  • 来源
    《Physical review》 |2017年第6期|064402.1-064402.6|共6页
  • 作者单位

    School of Physics and Electronic Information Engineering, Henan Polytechnic University, Jiaozuo 454000, China;

    Department of Physics, Beijing Normal University, Beijing 100875, China;

    Department of Physics, Beijing Normal University, Beijing 100875, China;

    Institute for Advanced Materials and Laboratory of Quantum Engineering and Quantum Materials, South China Normal University, Guangzhou 510006, China;

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