Effective one-band approach for the spin splittings in quantum wells

P. S. Alekseev; M. O. Nestoklon

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Effective one-band approach for the spin splittings in quantum wells

机译：量子阱中自旋分裂的有效单频带方法

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The spin-orbit interaction of two-dimensional electrons in quantum wells grown from the III-V semiconductors consists of two parts with different symmetry: the Bychkov-Rashba and the Dresselhaus terms. The last term is usually attributed to the bulk spin-orbit Hamiltonian which reflects the T_d symmetry of the zincblende lattice. While it is known that the quantum well interfaces may also contribute to the Dresselhaus term, the exact structure and relative importance of the interface and bulk contributions are not well understood. To deal with this problem, we perform tight-binding calculations of the spin splittings of the electron levels in [100] GaAs/AlGaAs quantum wells. We show that the obtained spin splittings can be adequately described within the one-band electron Hamiltonian containing, together with the bulk contribution, the two interface contributions to the Dresselhaus term. The magnitude of the interface contribution to the spin-orbit interaction for sufficiently narrow quantum wells is of the same order as the bulk contribution.

机译：由III-V半导体生长的量子阱中的二维电子的自旋轨道相互作用包括两个具有不同对称性的部分：Bychkov-Rashba和Dresselhaus术语。最后一项通常归因于整体自旋哈密顿量，反映了闪锌矿晶格的T_d对称性。虽然已知量子阱界面也可能对Dresselhaus术语有所贡献，但人们对界面的确切结构和相对重要性以及整体贡献尚不甚了解。为了解决这个问题，我们对[100] GaAs / AlGaAs量子阱中电子能级的自旋分裂进行紧密束缚计算。我们表明，所获得的自旋裂分可以在一个带电子哈密顿量中得到充分描述，该哈密顿量连同体量贡献，两个界面对Dresselhaus项的贡献。对于足够窄的量子阱，界面对自旋轨道相互作用的贡献的大小与整体贡献的数量级相同。

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《Physical review》 |2017年第12期|125303.1-125303.7|共7页
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P. S. Alekseev; M. O. Nestoklon;
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loffe Institute, St. Petersburg 194021, Russia;

loffe Institute, St. Petersburg 194021, Russia;

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1. Effective one-band approach for the spin splittings in quantum wells [J] . P. S. Alekseev, M. O. Nestoklon Physical Review. B, Condensed Matter . 2017,第11a12CD期

机译：Quantum Wells中的旋转分配器的有效单带方法
2. Effect of the Dresselhaus spin splitting on the effective Lande g-factor in GaAs-(Ga,Al)As quantum wells under in-plane or growth-direction magnetic fields [J] . N. Porras-Monenegro, C.A. Perdomo-Leiva, E. Reyes-Gomez, Microelectronics journal . 2008,第3a4期

机译：平面或生长方向磁场下，Dresselhaus自旋分裂对GaAs-（Ga，Al）As量子阱中有效Land g因子的影响
3. Modeling of optoelectronic devices with one-band effective mass equation: nonequilibrium Green's function approach [J] . Andrzej Kolek Optical and quantum electronics . 2016,第2期

机译：具有一频带有效质量方程的光电器件建模：非平衡格林函数法
4. A modified transfer matrix approach to include Zeeman spin splitting in dispersion relations for coupled quantum wells [C] . A Hernandez-Cabrera, P Aceituno International Conference on Mathematical Modeling in Physical Sciences . 2015

机译：一种改进的转移矩阵方法，包括耦合量子阱的色散关系中的塞曼旋转分裂
5. I. Theoretical investigations of spin-spin interactions: Semiempirical estimations of exchange parameters for diradical metalloporphyrin cations and zero-field splitting parameters for conjugated diradicals. II. Synthesis and characterization of radical-substituted metalloporphyrins: Precursors for potential molecular magnetic building blocks. [D] . Sandberg, Kay Aycock. 1998

机译：一，自旋-自旋相互作用的理论研究：双自由基金属卟啉阳离子交换参数和共轭双自由基零场分裂参数的半经验估计。二。自由基取代的金属卟啉的合成与表征：潜在分子磁性构件的前体。
6. Tuning of Rashba/Dresselhaus Spin Splittings by Inserting Ultra-Thin InAs Layers at Interfaces in Insulating GaAs/AlGaAs Quantum Wells [O] . Jinling Yu, Xiaolin Zeng, Shuying Cheng, 2016

机译：通过在绝缘GaAs / AlGaAs量子阱的界面处插入超薄InAs层来调整Rashba / Dresselhaus自旋分裂
7. Effective one-band approach for the spin splittings in quantum wells [O] . Alekseev, P. S., Nestoklon, M. O. 2016

机译：量子阱中自旋分裂的有效单波段方法

Effective one-band approach for the spin splittings in quantum wells

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