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Domain-wall dynamics in magnetoelastic nanostripes

机译:磁弹性纳米带的畴壁动力学

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摘要

We numerically demonstrate the possibility to manipulate domain walls in magnetoelastic nanostripes by means of uniform mechanical stresses. The symmetry breaking of the magnetic states in unidimensional ferromagnets allows the control of the domain-wall position or velocity in geometrically tailored nanostripes coupled to piezoelectric substrates. We further predict that this approach yields unusual domain-wall configurations with velocities of the same order of magnitude as that induced by magnetic fields or spin-polarized currents, while the energy consumption is considerably smaller.
机译:我们数值证明了通过均匀的机械应力来操纵磁弹性纳米带中的畴壁的可能性。一维铁磁体中磁态的对称破坏允许控制耦合到压电基板的几何定制纳米带中的畴壁位置或速度。我们进一步预测,这种方法会产生不寻常的畴壁配置,其速度与磁场或自旋极化电流所感应的速度数量级相同,而能量消耗要小得多。

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  • 来源
    《Physical review》 |2017年第14期|140405.1-140405.5|共5页
  • 作者单位

    Institute of Electronics, Microelectronics and Nanotechnology - UMR 8520, LIA LICS, Universite Lille, CNRS, Centrale Lille, ISEN, Universite Valenciennes, F-59000 Lille, France;

    Institute of Electronics, Microelectronics and Nanotechnology - UMR 8520, LIA LICS, Universite Lille, CNRS, Centrale Lille, ISEN, Universite Valenciennes, F-59000 Lille, France;

    Institute of Electronics, Microelectronics and Nanotechnology - UMR 8520, LIA LICS, Universite Lille, CNRS, Centrale Lille, ISEN, Universite Valenciennes, F-59000 Lille, France;

    Institute of Electronics, Microelectronics and Nanotechnology - UMR 8520, LIA LICS, Universite Lille, CNRS, Centrale Lille, ISEN, Universite Valenciennes, F-59000 Lille, France;

    Institute of Electronics, Microelectronics and Nanotechnology - UMR 8520, LIA LICS, Universite Lille, CNRS, Centrale Lille, ISEN, Universite Valenciennes, F-59000 Lille, France;

    Institute of Electronics, Microelectronics and Nanotechnology - UMR 8520, LIA LICS, Universite Lille, CNRS, Centrale Lille, ISEN, Universite Valenciennes, F-59000 Lille, France;

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