Influence of carrier localization at the core/shell interface on the temperature dependence of the Stokes shift and the photoluminescence decay time in CdTe/CdS type-II quantum dots

Taichi Watanabe; Kohji Takahashi; Kunio Shimura; DaeGwi Kim

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Influence of carrier localization at the core/shell interface on the temperature dependence of the Stokes shift and the photoluminescence decay time in CdTe/CdS type-II quantum dots

机译：CdTe / CdS II型量子点中核/壳界面处载流子定位对斯托克斯位移的温度依赖性和光致发光衰减时间的影响

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We have systematically investigated the temperature dependence of absorption, photoluminescence (PL), and PL decay profiles in CdTe-core and CdTe/CdS type-II quantum dots (QDs). In CdTe/CdS QDs, Stokes shifts and PL decay time become larger with an increase in temperature above 120 K, while those in CdTe-core QDs are almost independent of temperature. The unusual temperature dependence of Stokes shifts and PL decay time in CdTe/CdS QDs is understood by considering carrier localization at the core/shell interface at low temperatures and thermal-energy-assisted detrapping from localized-exciton to type-II exciton states at higher temperatures. Furthermore, a phenomenological rate-equation model is developed to explain the experimentally observed temperature-dependent PL decay time.

机译：我们已经系统地研究了CdTe核心和CdTe / CdS II型量子点（QD）中吸收，光致发光（PL）和PL衰减曲线的温度依赖性。在CdTe / CdS量子点中，斯托克斯频移和PL衰减时间随着温度升高至120 K以上而变大，而在CdTe核心量子点中，斯托克斯频移和PL衰减时间几乎与温度无关。 CdTe / CdS QD中斯托克斯位移和PL衰减时间与温度的异常相关性可以通过考虑在低温下核/壳界面处的载流子定位以及在更高温度下从局部激子到II型激子的热能辅助俘获来理解温度。此外，建立了一个现象学速率方程模型来解释实验观察到的温度相关的PL衰减时间。

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《Physical review》 |2017年第3期|035305.1-035305.7|共7页
作者
Taichi Watanabe; Kohji Takahashi; Kunio Shimura; DaeGwi Kim;
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Department of Applied Physics, Osaka City University, Osaka 558-8585, Japan;

Department of Applied Physics, Osaka City University, Osaka 558-8585, Japan;

Department of Applied Physics, Osaka City University, Osaka 558-8585, Japan;

Department of Applied Physics, Osaka City University, Osaka 558-8585, Japan;

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1. Influence of carrier localization at the core/shell interface on the temperature dependence of the Stokes shift and the photoluminescence decay time in CdTe/CdS type-II quantum dots [J] . Watanabe Taichi, Takahashi Kohji, Shimura Kunio, Physical review, B . 2017,第3期

机译：在CDTE / CDS-II型量子点中的核心/壳界面对核心/壳界面对斯托克斯换档的温度依赖性的影响及光致发光衰减时间
2. Influence of carrier localization at the core/shell interface on the temperature dependence of the Stokes shift and the photoluminescence decay time in CdTe/CdS type-II quantum dots [J] . Taichi Watanabe, Kohji Takahashi, Kunio Shimura, Physical Review. B, Condensed Matter . 2017,第3a4CD期

机译：在CDTE / CDS-II型量子点中的核心/壳界面对核心/壳界面对斯托克斯换档的温度依赖性的影响及光致发光衰减时间
3. Unique Temperature Dependence and Blinking Behavior of CdTe/CdSe (Core/Shell) Type-II Quantum Dots [J] . Bonghwan Chon, Jiwon Bang, Juwon Park The journal of physical chemistry, C. Nanomaterials and interfaces . 2011,第2期

机译：CdTe / CdSe（核/壳）II型量子点的独特温度依赖性和闪烁行为
4. Carrier localization impact on time-resolved dependence of the photoluminescence of CdSe/ZnCdMgSe self-assembled quantum dots at different temperatures [C] . I. Zeylikovich, V. Kartazaev, B. Das, Conference on Lasers and Electro-Optics Quantum Electronics and Laser Science Conference . 2009

机译：载体定位对不同温度下CDSE / ZNCDMGSE自组装量子点的光致发光的时间分辨依赖性的影响
5. Optimization of shell growth and influence of surface ligands for colloidal CdSe/CdS core/shell quantum dots. [D] . Tan, Rui. 2015

机译：胶体CdSe / CdS核/壳量子点的壳生长优化和表面配体的影响。
6. Influence of the Shell Thickness and Ratio Between Core Elements on Photostability of the CdTe/CdS Core/Shell Quantum Dots Embedded in a Polymer Matrix [O] . Nataliia Doskaliuk, Yuriy Khalavka, Petro Fochuk 2016

机译：壳厚度和核心元素之间的比率对聚合物基质中嵌入的CdTe / CdS核/壳量子点的光稳定性的影响
7. Influence of the Shell Thickness and Ratio Between Core Elements on Photostability of the CdTe/CdS Core/Shell Quantum Dots Embedded in a Polymer Matrix [O] . Nataliia Doskaliuk, Yuriy Khalavka, Petro Fochuk 2016

机译：壳厚度和核心元素之间的比率对聚合物基质中嵌入的CdTe / CdS核/壳量子点的光稳定性的影响

Influence of carrier localization at the core/shell interface on the temperature dependence of the Stokes shift and the photoluminescence decay time in CdTe/CdS type-II quantum dots

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