Indium coverage of the Si(111)-√7×√3-In surface

T. Suzuki; J. Lawrence; M. Walker; J. M. Morbec; P. Blowey; K. Yagyu; P. Kratzer; G. Costantini

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Indium coverage of the Si(111)-√7×√3-In surface

机译：Si（111）-√7×√3-In表面的铟覆盖率

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The indium coverage of the Si(111)-√7×√3-In surface is investigated by means of x-ray photoelectron spectroscopy and first-principles density functional theory calculations. Both experimental and theoretical results indicate that the In coverage is a double layer rather than a single layer. Moreover, the atomic structure of the Si(111)-√7×√3-In surface is discussed by comparing experimental with simulated scanning tunneling microscopy (STM) images and scanning tunneling spectra with the calculated density of states. Our structural assignment agrees with previous studies, except for the interpretation of experimental STM images.

机译：利用X射线光电子能谱和第一性原理密度泛函理论研究了Si（111）-√7×√3-In表面的铟覆盖率。实验和理论结果均表明In覆盖范围是双层而不是单层。此外，通过比较实验和模拟扫描隧道显微镜（STM）图像以及扫描隧道光谱与计算出的态密度，讨论了Si（111）-√7×√3-In表面的原子结构。除了解释实验STM图像外，我们的结构分配与以前的研究一致。

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《Physical review》 |2017年第3期|035412.1-035412.7|共7页
作者
T. Suzuki; J. Lawrence; M. Walker; J. M. Morbec; P. Blowey; K. Yagyu; P. Kratzer; G. Costantini;
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Department of Electronics Engineering and Computer Science, Fukuoka University, Fukuoka 814-0180, Japan,Department of Chemistry, University of Warwick, Coventry, CV4 7AL, United Kingdom;

Department of Chemistry, University of Warwick, Coventry, CV4 7AL, United Kingdom;

Department of Physics, University of Warwick, Coventry, CV4 7AL, United Kingdom;

Faculty of Physics, University of Duisburg-Essen, Lotharstrasse 1, 47057 Duisburg, Germany;

Department of Physics, University of Warwick, Coventry, CV4 7AL, United Kingdom,Diamond Light Source, Harwell Science and Innovation Campus, Didcot, 0X11 0QX, United Kingdom;

Department of Electronics Engineering and Computer Science, Fukuoka University, Fukuoka 814-0180, Japan;

Faculty of Physics, University of Duisburg-Essen, Lotharstrasse 1, 47057 Duisburg, Germany;

Department of Chemistry, University of Warwick, Coventry, CV4 7AL, United Kingdom;

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1. Indium coverage of the Si(111)-root 7 x root 3-In surface [J] . Suzuki T., Lawrence J., Walker M., Physical review, B . 2017,第3期

机译：Si（111）的铟覆盖范围 - root 7 x根3- in表面
2. Thin Pb films on the Si(111)-root 7x root 3-In reconstructed surfaces [J] . Bilinska Sylwia, Idczak Karolina, Skiscim Marta, Vacuum: Technology Applications & Ion Physics: The International Journal & Abstracting Service for Vacuum Science & Technology . 2015,第Pta2期

机译：Si（111）根7x根3-In重建表面上的Pb薄膜
3. Indium coverage of the Si(111)-7~(1/2) ×3~(1/2)-In surface [J] . T. Suzuki, J. Lawrence, M. Walker, Physical Review. B, Condensed Matter . 2017,第3a4CD期

机译：Si（111）-7〜（1/2）×3〜（1/2）-in表面的铟覆盖范围
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5. Surface coverage and structure of catalytic monolayers on Au(111) electrodes. [D] . Niece, Brian Keith. 1997

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6. Nickel-containing nano-sized islands grown on Ge(111)-c(2 × 8) and Ag/Ge(111)-(√3 × √3) surfaces [O] . Tsu-Yi Fu, Agnieszka Tomaszewska, Xiao-Lan Huang, 2013

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7. Indium coverage of the Si(111)- 7×3 -in surface [O] . Suzuki Takayuki, Lawrence James M. (Michenson), Walker Marc, 2017

机译：Si（111）-7×3 -in表面的铟覆盖率

Indium coverage of the Si(111)-√7×√3-In surface

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