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Quantum electron transport in magnetically entangled subbands

机译：纠缠子带中的量子电子传输

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摘要

Transport properties of highly mobile two-dimensional (2D) electrons in symmetric GaAs quantum wells with two populated subbands placed in tilted magnetic fields are studied at high temperatures. Quantum positive magnetoresistance (QPMR) and magneto-intersubband resistance oscillations (MISO) are observed in quantizing magnetic fields, B_⊥, applied perpendicular to the 2D layer. QPMR displays contributions from electrons with considerably different quantum lifetimes, τ_q~(1,2), confirming the presence of two subbands in the studied system. MISO evolution with B_⊥ agrees with the obtained quantum scattering times only if an additional reduction of the MISO magnitude is applied at small magnetic fields. This indicates the presence of a yet unknown mechanism leading to MISO damping. Application of an in-plane magnetic field produces a strong decrease of both QPMR and MISO magnitude. The reduction of QPMR is explained by spin splitting of Landau levels indicating a g factor, g ≈ 0.4, which is considerably less than the g factor found in GaAs quantum well with a single subband populated. In contrast to QPMR, the decrease of MISO magnitude is largely related to the in-plane magnetic field induced entanglement between quantum levels in different subbands that, in addition, increases the MISO period.
机译：在高温下研究了高迁移率二维（2D）电子在对称的GaAs量子阱中的传输特性，该对称GaAs量子阱中有两个人口子带置于倾斜磁场中。在量化垂直于2D层施加的磁场B_⊥时，观察到了量子正磁阻（QPMR）和磁带间电阻振荡（MISO）。 QPMR显示出量子寿命τ_q〜（1,2）相差很大的电子的贡献，从而证实了所研究系统中存在两个子带。只有在小磁场下MISO幅度进一步减小的情况下，B_⊥的MISO演化与获得的量子散射时间一致。这表明存在导致MISO阻尼的未知机制。施加面内磁场会使QPMR和MISO幅度均大大降低。 QPMR的降低是通过Landau能级的自旋分裂来解释的，该分裂表明g因子g≈0.4，这大大低于GaAs量子阱中单个子带的g因子。与QPMR相比，MISO幅度的下降主要与平面磁场在不同子带中的量子能级之间的纠缠有关，此外还会增加MISO周期。

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  • 来源
    《Physical review》 |2017年第4期|045436.1-045436.11|共11页
  • 作者

    William Mayer; Sergey Vitkalov; A. A. Bykov;

  • 作者单位

    Physics Department, City College of the City University of New York, New York 10031, USA;

    Physics Department, City College of the City University of New York, New York 10031, USA;

    A. V. Rzhanov Institute of Semiconductor Physics, Novosibirsk 630090, Russia and Physics Department, Novosibirsk State University, Novosibirsk 630090, Russia;

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