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Disentangling surface and bulk transport in topological-insulator p-n junctions

机译:解开拓扑绝缘子p-n结中的表面和大量运输

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By combining n-type Bi_2Te_3 and p-type Sb_2Te_3 topological insulators, vertically stacked p-n junctions can be formed, allowing to position the Fermi level into the bulk band gap and also tune between n- and p-type surface carriers. Here, we use low-temperature magnetotransport measurements to probe the surface and bulk transport modes in a range of vertical Bi_2Te_3/Sb_2Te_3 heterostructures with varying relative thicknesses of the top and bottom layers. With increasing thickness of the Sb_2Te_3 layer we observe a change from n- to p-type behavior via a specific thickness where the Hall signal is immeasurable. Assuming that the the bulk and surface states contribute in parallel, we can calculate and reproduce the dependence of the Hall and longitudinal components of resistivity on the film thickness. This highlights the role played by the bulk conduction channels which, importantly, cannot be probed using surface-sensitive spectroscopic techniques. Our calculations are then buttressed by a semiclassical Boltzmann transport theory which rigorously shows the vanishing of the Hall signal. Our results provide crucial experimental and theoretical insights into the relative roles of the surface and bulk in the vertical topological p-n junctions.
机译:通过组合n型Bi_2Te_3和p型Sb_2Te_3拓扑绝缘体,可以形成垂直堆叠的p-n结,从而将费米能级定位在体带隙中,并在n型和p型表面载体之间进行调谐。在这里,我们使用低温磁传输测量来探测在垂直的Bi_2Te_3 / Sb_2Te_3异质结构的范围内,顶层和底层的相对厚度各不相同的表面和整体传输模式。随着Sb_2Te_3层厚度的增加,我们观察到了霍尔信号不可测量的特定厚度从n型到p型行为的变化。假设体态和表面态平行地起作用,我们可以计算并再现霍尔和电阻率的纵向分量对薄膜厚度的依赖性。这突显了大体积传导通道所起的作用,重要的是,使用表面敏感光谱技术无法探测到。然后,我们的计算得到了半经典玻耳兹曼输运理论的支持,该理论严格显示了霍尔信号的消失。我们的结果提供了关键的实验和理论见解,以了解表面和体在垂直拓扑p-n结中的相对作用。

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  • 来源
    《Physical review》 |2017年第12期|125125.1-125125.10|共10页
  • 作者单位

    Cavendish Laboratory, University of Cambridge, J. J. Thomson Avenue, Cambridge CB3 OHE, United Kingdom;

    Air Force Research Laboratory, Space Vehicles Directorate, Kirtland Air Force Base, New Mexico 87117, USA;

    Cavendish Laboratory, University of Cambridge, J. J. Thomson Avenue, Cambridge CB3 OHE, United Kingdom;

    Peter Gruenberg Institute (PGI-9), Forschungszentrum Juelich, 52425 Juelich, Germany;

    Peter Gruenberg Institute (PGI-9), Forschungszentrum Juelich, 52425 Juelich, Germany;

    Cavendish Laboratory, University of Cambridge, J. J. Thomson Avenue, Cambridge CB3 OHE, United Kingdom;

    Peter Gruenberg Institute (PGI-9), Forschungszentrum Juelich, 52425 Juelich, Germany;

    Department of Physics and Astronomy, Hunter College of the City University of New York, 695 Park Avenue, New York, New York 10065, USA;

    Peter Gruenberg Institute (PGI-9), Forschungszentrum Juelich, 52425 Juelich, Germany;

    Cavendish Laboratory, University of Cambridge, J. J. Thomson Avenue, Cambridge CB3 OHE, United Kingdom;

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