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首页> 外文期刊>Physical review >Electronic structure of ThRu_2Si_2 studied by angle-resolved photoelectron spectroscopy: Elucidating the contribution of U 5f states in URu_2Si_2
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Electronic structure of ThRu_2Si_2 studied by angle-resolved photoelectron spectroscopy: Elucidating the contribution of U 5f states in URu_2Si_2

机译：角度分辨光电子能谱研究ThRu_2Si_2的电子结构：阐明U 5f态在URu_2Si_2中的贡献

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摘要

The electronic structure of ThRu_2Si_2 was studied using angle-resolved photoelectron spectroscopy (ARPES) with incident photon energies of hν = 655-745 eV. Detailed band structure and the three-dimensional shapes of Fermi surfaces were derived experimentally, and their characteristic features were mostly explained by means of band-structure calculations based on density-functional theory. Comparison of the experimental ARPES spectra of ThRu_2Si_2 with those of URu_2Si_2 shows that they have considerably different spectral profiles, particularly in the energy range of 1 eV from the Fermi level, suggesting that U 5f states are substantially hybridized in these bands. The relationship between the ARPES spectra of URu_2Si_2 and ThRu_2Si_2 is very different from the one between the ARPES spectra of CeRu_2Si_2 and LaRu_2Si_2, where the intrinsic difference in their spectra is limited only in the very vicinity of the Fermi energy. The present result suggests that the U 5f electrons in URu_2Si_2 have strong hybridization with ligand states and have an essentially itinerant character.
机译：ThRu_2Si_2的电子结构使用角度分辨光电子能谱（ARPES）研究，入射光子能量为hν= 655-745 eV。通过实验推导了费米表面的详细能带结构和三维形状，并主要通过基于密度泛函理论的能带结构计算来解释其特征。 ThRu_2Si_2与URu_2Si_2的实验ARPES光谱的比较表明，它们具有明显不同的光谱曲线，尤其是在距费米能级1 eV的能量范围内，这表明U 5f态在这些谱带中基本杂交。 URu_2Si_2和ThRu_2Si_2的ARPES光谱之间的关系与CeRu_2Si_2和LaRu_2Si_2的ARPES光谱之间的关系非常不同，其中它们的光谱固有差异仅在费米能量的附近受到限制。目前的结果表明，URu_2Si_2中的U 5f电子与配体态具有很强的杂化作用，并且具有基本的迭代特征。

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  • 来源
    《Physical review》 |2017年第12期|125117.1-125117.9|共9页
  • 作者

    Shin-ichi Fujimori; Masaaki Kobata; Yukiharu Takeda; Tetsuo Okane; Yuji Saitoh; Atsushi Fujimori; Hiroshi Yamagami; Yuji Matsumoto; Etsuji Yamamoto; Naoyuki Tateiwa; Yoshinori Haga;

  • 作者单位

    Materials Sciences Research Center, Japan Atomic Energy Agency, Sayo, Hyogo 679-5148, Japan;

    Materials Sciences Research Center, Japan Atomic Energy Agency, Sayo, Hyogo 679-5148, Japan;

    Materials Sciences Research Center, Japan Atomic Energy Agency, Sayo, Hyogo 679-5148, Japan;

    Materials Sciences Research Center, Japan Atomic Energy Agency, Sayo, Hyogo 679-5148, Japan;

    Materials Sciences Research Center, Japan Atomic Energy Agency, Sayo, Hyogo 679-5148, Japan;

    Materials Sciences Research Center, Japan Atomic Energy Agency, Sayo, Hyogo 679-5148, Japan,Department of Physics, University of Tokyo, Hongo, Tokyo 113-0033, Japan;

    Materials Sciences Research Center, Japan Atomic Energy Agency, Sayo, Hyogo 679-5148, Japan,Department of Physics, Faculty of Science, Kyoto Sangyo University, Kyoto 603-8555, Japan;

    Advanced Science Research Center, Japan Atomic Energy Agency, Tokai, Ibaraki 319-1195, Japan;

    Advanced Science Research Center, Japan Atomic Energy Agency, Tokai, Ibaraki 319-1195, Japan;

    Advanced Science Research Center, Japan Atomic Energy Agency, Tokai, Ibaraki 319-1195, Japan;

    Advanced Science Research Center, Japan Atomic Energy Agency, Tokai, Ibaraki 319-1195, Japan;

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