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首页> 外文期刊>Physical review >Separation of electron and hole dynamics in the semimetal LaSb
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Separation of electron and hole dynamics in the semimetal LaSb

机译：半金属LaSb中电子和空穴动力学的分离

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摘要

We report investigations on the magnetotransport in LaSb, which exhibits extremely large magnetoresistance (XMR). Foremost, we demonstrate that the resistivity plateau can be explained without invoking topological protection. We then determine the Fermi surface from Shubnikov-de Haas (SdH) quantum oscillation measurements and find good agreement with the bulk Fermi pockets derived from first-principles calculations. Using a semiclassical theory and the experimentally determined Fermi pocket anisotropics, we quantitatively describe the orbital magnetoresistance, including its angle dependence. We show that the origin of XMR in LaSb lies in its high mobility with diminishing Hall effect, where the high mobility leads to a strong magnetic-field dependence of the longitudinal magnetoconductance. Unlike a one-band material, when a system has two or more bands (Fermi pockets) with electron and hole carriers, the added conductance arising from the Hall effect is reduced, hence revealing the latent XMR enabled by the longitudinal magnetoconductance. With diminishing Hall effect, the magnetoresistivity is simply the inverse of the longitudinal magnetoconductivity, enabling the differentiation of the electron and hole contributions to the XMR, which varies with the strength and orientation of the magnetic field. This work demonstrates a convenient way to separate the dynamics of the charge carriers and to uncover the origin of XMR in multiband materials with anisotropic Fermi surfaces. Our approach can be readily applied to other XMR materials.
机译：我们报告了对LaSb中的磁传输的研究，它表现出极大的磁阻（XMR）。最重要的是，我们证明了可以在不调用拓扑保护的情况下解释电阻率平台。然后，我们通过Shubnikov-de Haas（SdH）量子振荡测量确定费米表面，并与从第一性原理计算得出的大块费米腔相吻合。使用半经典理论和实验确定的费米口袋各向异性，我们定量描述了轨道磁阻，包括其角度依赖性。我们表明，XMR在LaSb中的起源在于其高迁移率和霍尔效应递减，其中高迁移率导致纵向磁导的强磁场依赖性。与单波段材料不同，当系统具有两个或多个带有电子和空穴载流子的波段（费米腔）时，由霍尔效应引起的增加的电导会减少，因此会显示出纵向磁导所带来的潜在XMR。随着霍尔效应的减小，磁阻仅是纵向磁导率的倒数，从而可以区分电子和空穴对XMR的贡献，该贡献随磁场的强度和方向而变化。这项工作展示了一种简便的方法，可以分离电荷载流子的动力学，并揭示具有各向异性费米表面的多频带材料中XMR的起源。我们的方法可以很容易地应用于其他XMR材料。

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  • 来源
    《Physical review》 |2017年第12期|125112.1-125112.12|共12页
  • 作者

    F. Han; J. Xu; A. S. Botana; Z. L. Xiao; Y. L. Wang; W. G. Yang; D. Y. Chung; M. G. Kanatzidis; M. R. Norman; G. W. Crabtree; W. K. Kwok;

  • 作者单位

    Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439, USA,Center for High Pressure Science and Technology Advanced Research, Shanghai 201203, China;

    Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439, USA,Department of Physics, Northern Illinois University, DeKalb, Illinois 60115, USA;

    Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439, USA;

    Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439, USA,Department of Physics, Northern Illinois University, DeKalb, Illinois 60115, USA;

    Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439, USA,Department of Physics, University of Notre Dame, Notre Dame, Indiana 46556, USA;

    Center for High Pressure Science and Technology Advanced Research, Shanghai 201203, China;

    Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439, USA;

    Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439, USA,Department of Chemistry, Northwestern University, Evanston, Illinois 60208, USA;

    Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439, USA;

    Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439, USA;

    Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439, USA;

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