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Determination of spin relaxation times in heavy metals via second-harmonic spin injection magnetoresistance

机译:通过二次谐波自旋注入磁阻法测定重金属中的自旋弛豫时间

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摘要

In tunnel junctions between ferromagnets and heavy elements with strong spin orbit coupling the magnetoresistance is usually dominated by tunneling anisotropic magnetoresistance (TAMR). This makes conventional DC spin injection techniques impractical for determining the spin relaxation time τ_s. Here, we show that this obstacle for measurements of τ_s can be overcome by second-harmonic spin-injection magnetoresistance (SIMR). In the second-harmonic signal the SIMR is comparable in magnitude to TAMR, thus enabling Hanle-induced SIMR as a powerful tool to directly determine τ_s. Using this approach we determined the spin relaxation time of Pt and Ta and their temperature dependences. The spin relaxation in Pt seems to be governed by the Elliott-Yafet mechanism due to a constant resistivity x spin relaxation time product over a wide temperature range.
机译:在铁磁体和具有强自旋轨道耦合的重元素之间的隧道结中,磁阻通常由隧道各向异性磁阻(TAMR)决定。这使得常规的DC自旋注入技术对于确定自旋弛豫时间τ_s不切实际。在这里,我们表明,可以通过二次谐波自旋注入磁阻(SIMR)来克服测量τ_s的障碍。在二次谐波信号中,SIMR的大小与TAMR相当,因此使Hanle诱导的SIMR成为直接确定τ_s的强大工具。使用这种方法,我们确定了Pt和Ta的自旋弛豫时间及其温度依赖性。由于在宽温度范围内电阻率x自旋弛豫时间乘积恒定,因此Pt中的自旋弛豫似乎受Elliott-Yafet机制控制。

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  • 来源
    《Physical review》 |2017年第13期|134421.1-134421.10|共10页
  • 作者单位

    Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China,University of Chinese Academy of Sciences, Beijing 100049, China;

    Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China,University of Chinese Academy of Sciences, Beijing 100049, China;

    Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China,University of Chinese Academy of Sciences, Beijing 100049, China;

    Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China,University of Chinese Academy of Sciences, Beijing 100049, China;

    Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China,University of Chinese Academy of Sciences, Beijing 100049, China;

    Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China,University of Chinese Academy of Sciences, Beijing 100049, China;

    Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China,University of Chinese Academy of Sciences, Beijing 100049, China;

    Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China,University of Chinese Academy of Sciences, Beijing 100049, China;

    Materials Science Division, Argonne National Laboratory, 9700 S. Cass Avenue, Lemont, Illinois 60439, USA;

    Department of Physics, Shanghai University, Shanghai 200444, China;

    Department of Physics, Shanghai University, Shanghai 200444, China;

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