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机译:单晶FeSe的s ++状态下对称性未受保护的节点或缝隙最小值
Department of Applied Physics, The University of Tokyo, Bunkyo-ku, Tokyo 113-8656, Japan ,Institute for Solid State Physics (ISSP), The University of Tokyo, Kashiwa, Chiba 277-8581, Japan;
Department of Applied Physics, The University of Tokyo, Bunkyo-ku, Tokyo 113-8656, Japan;
Department of Applied Physics, The University of Tokyo, Bunkyo-ku, Tokyo 113-8656, Japan;
Department of Applied Physics, The University of Tokyo, Bunkyo-ku, Tokyo 113-8656, Japan;
National Institute of Radiological Sciences, National Institutes for Quantum and Radiological Science and Technology,Chiba 263-8555, Japan;
机译:单晶性遗物的S ++状态下对称性 - 未受保护的节点或间隙最小值
机译:单晶性遗嘱S _(++)状态下的对称性 - 未受保护的节点或间隙最小值
机译:H_(c2)的比热:Ba(Fe_(1-x)Co_x)_2As_2的超导间隙中节点或深极小值的证据
机译:在整数量子霍尔效应中以电阻率最小值探测迁移率间隙
机译:14纳米FinFET节点的带隙参考设计。
机译:FeSe1-xSx的向列临界点超导间隙结构的突变
机译:Fess中$ s _ {++} $状态中的对称未保护节点或间隙最小值 单晶
机译:通过能带结构计算和电子拉曼散射精确定位Ba(Fe0:94Co0:06)2中的间隙最小值