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首页> 外文期刊>Physical review >Electric-field-induced modulation of the anomalous Hall effect in a heterostructured itinerant ferromagnet SrRuO_3
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Electric-field-induced modulation of the anomalous Hall effect in a heterostructured itinerant ferromagnet SrRuO_3

机译：异质结构巡回铁磁体SrRuO_3中电场对异常霍尔效应的调制

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摘要

We fabricated electric-field-effect transistor structures with a channel layer of an itinerant ferromagnet SrRuO_3 (SRO) heterostructured with a cap layer of BaTiO_3 and investigated the electric field effects on the anomalous Hall effect (AHE) in SRO. We show that by applying positive and negative gate voltages (V_G), the anomalous Hall conductivity in the heterostructured SRO increases and decreases, respectively, regardless of its sign, while no change in the magnetic easy axis direction is observed. The results indicate that the observed V_G-induced modulations of the AHE do not simply originate from changes in the magnetization and magnetic anisotropy and indicate that V_G-induced changes in an integral of the Berry curvature over the filled electronic states play a key role in the observed electric field effects on the AHE in SRO. We also found that V_G-induced modulations on the AHE are negligibly small for transistor structures with a SRO channel having no BTO cap layer. This implies that the cap-layer-induced modifications in the Ru-O-Ru bond angles in the channel affect the Berry phase, enhancing the electric field effects on the AHE in SRO.
机译：我们制造了一个电场效应晶体管结构，该结构的结构是带有异质结构的流动铁磁体SrRuO_3（SRO）的沟道层，并盖有BaTiO_3的盖层，并研究了电场对SRO中异常霍尔效应（AHE）的影响。我们表明，通过施加正和负栅极电压（V_G），异质结构SRO中的异常霍尔电导率分别增大和减小，而不论其符号如何，而在磁易轴方向上没有观察到变化。结果表明，观察到的AHE的V_G诱导的调制不仅仅源自磁化和磁各向异性的变化，并且表明V_G诱导的在填充电子状态下的贝里曲率积分中的变化在晶格中起关键作用。观察到电场对SRO中AHE的影响。我们还发现，对于具有不带BTO盖层的SRO通道的晶体管结构，AHE上V_G引起的调制很小，可以忽略不计。这意味着通道中Ru-O-Ru键角中盖层诱导的修饰会影响Berry相，从而增强电场对SRO中AHE的影响。

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  • 来源
    《Physical review》 |2017年第21期|214422.1-214422.7|共7页
  • 作者

    Hayato Mizuno; Kihiro T. Yamada; Daisuke Kan; Takahiro Moriyama; Yuichi Shimakawa; Teruo Ono;

  • 作者单位

    Institute for Chemical Research, Kyoto University, Uji, Kyoto 611-0011, Japan;

    Institute for Chemical Research, Kyoto University, Uji, Kyoto 611-0011, Japan;

    Institute for Chemical Research, Kyoto University, Uji, Kyoto 611-0011, Japan;

    Institute for Chemical Research, Kyoto University, Uji, Kyoto 611-0011, Japan;

    Institute for Chemical Research, Kyoto University, Uji, Kyoto 611-0011, Japan,Integrated Research Consortium on Chemical Sciences, Uji, Kyoto 611-0011, Japan;

    Institute for Chemical Research, Kyoto University, Uji, Kyoto 611-0011, Japan,Center for Spintronics Research Network (CSRN), Graduate School of Engineering Science, Osaka University, Toyonaka, Osaka 560-8531, Japan;

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