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Multiscale modeling of current-induced switching in magnetic tunnel junctions using ab initio spin-transfer torques

机译:使用从头算起的自旋传递扭矩对磁性隧道结中电流感应开关进行多尺度建模

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摘要

There exists a significant challenge in developing efficient magnetic tunnel junctions with low write currents for nonvolatile memory devices. With the aim of analyzing potential materials for efficient current-operated magnetic junctions, we have developed a multi-scale methodology combining ab initio calculations of spin-transfer torque with large-scale time-dependent simulations using atomistic spin dynamics. In this work we introduce our multiscale approach, including a discussion on a number of possible schemes for mapping the ab initio spin torques into the spin dynamics. We demonstrate this methodology on a prototype Co/MgO/Co/Cu tunnel junction showing that the spin torques are primarily acting at the interface between the Co free layer and MgO. Using spin dynamics we then calculate the reversal switching times for the free layer and the critical voltages and currents required for such switching. Our work provides an efficient, accurate, and versatile framework for designing novel current-operated magnetic devices, where all the materials details are taken into account.
机译:在为非易失性存储设备开发具有低写入电流的高效磁隧道结时,存在着巨大的挑战。为了分析用于高效电流操作磁结的潜在材料,我们开发了一种多尺度方法,结合了自旋传递扭矩的从头算和使用原子自旋动力学的大规模时变模拟。在这项工作中,我们介绍了我们的多尺度方法,包括对从头算自旋扭矩映射到自旋动力学的多种可能方案的讨论。我们在原型Co / MgO / Co / Cu隧道结上演示了该方法,表明自旋扭矩主要作用于无Co层和MgO之间的界面。然后,我们使用自旋动力学来计算自由层的反向开关时间以及这种开关所需的临界电压和电流。我们的工作为设计新颖的电流操作磁性设备提供了有效,准确和通用的框架,其中考虑了所有材料的细节。

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  • 来源
    《Physical review》 |2017年第22期|224410.1-224410.8|共8页
  • 作者单位

    School of Physics, AMBER and CRANN Institute, Trininty College, Dublin 2, Ireland;

    School of Physics, AMBER and CRANN Institute, Trininty College, Dublin 2, Ireland;

    School of Physics, AMBER and CRANN Institute, Trininty College, Dublin 2, Ireland;

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